IHW30N135R3FKSA1 Infineon Technologies, IHW30N135R3FKSA1 Datasheet - Page 8

• Manufacturer Part Number: IHW30N135R3FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IHW30N135R3FKSA1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.35 kV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 175 W
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Mounting Style: Through Hole
• Part # Aliases: IHW30N135R3 IHW30N135R3XK

Figure 5. Typicaloutputcharacteristic
Figure 7. Typicalcollector-emittersaturationvoltageas
3.0
2.5
2.0
1.5
1.0
90
80
70
60
50
40
30
20
10
0
0
0
V
V
GE
(T
afunctionofjunctiontemperature
(V
CE
=20V
vj
17V
15V
13V
11V
,COLLECTOR-EMITTERVOLTAGE[V]
T
GE
25
9V
7V
5V
=175°C)
I
I
I
vj
C
C
C
=15V)
,JUNCTIONTEMPERATURE[°C]
=15A
=30A
=60A
1
50
75
2
100
125
3
InductionHeatingSeries
150
175
4
8
Figure 6. Typicaltransfercharacteristic
Figure 8. Typicalswitchingtimesasafunctionof
1000
100
90
80
70
60
50
40
30
20
10
10
0
4
0
(V
collectorcurrent
(inductiveload,T
V
Figure E)
GE
CE
5
V
T
T
=15/0V,r
10
GE
=20V)
j
j
=25°C
=175°C
I
C
,GATE-EMITTERVOLTAGE[V]
,COLLECTORCURRENT[A]
6
20
t
t
d(off)
f
G
=10 ,Dynamictestcircuitin
7
vj
=175°C,V
30
8
IHW30N135R3
9
40
Rev.2.1,2012-10-12
CE
=600V,
10
50
11
12
60