IKP40N65F5XKSA1 Infineon Technologies, IKP40N65F5XKSA1 Datasheet - Page 12
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IKP40N65F5XKSA1
Manufacturer Part Number
IKP40N65F5XKSA1
Description
IGBT Transistors IGBT PRODUCTS
Manufacturer
Infineon Technologies
Datasheet
1.IKW40N65F5FKSA1.pdf
(18 pages)
Specifications of IKP40N65F5XKSA1
Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
74 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
255 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-220-3
Continuous Collector Current Ic Max
46 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Part # Aliases
IKP40N65F5 SP000973412
Figure 17. Typicalcapacitanceasafunctionof
0.001
Figure 19. Diodetransientthermalimpedanceasa
1E+4
1000
0.01
100
0.1
10
1
1
1E-7
0
V
CE
collector-emittervoltage
(V
functionofpulsewidth
(D=t
1E-6
,COLLECTOR-EMITTERVOLTAGE[V]
C
C
C
GE
5
iss
oss
rss
=0V,f=1MHz)
p
/T)
1E-5
t
p
,PULSEWIDTH[s]
10
1E-4
i:
r
i
i
[K/W]:
[s]:
15
0.001
1
0.6701584
3.4E-4
20
0.01
2
0.775759
4.7E-3
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Highspeedswitchingseriesfifthgeneration
25
3
0.3540826
0.04680901
0.1
30
1
12
Figure 18. IGBTtransientthermalresistance
Figure 20. Typicalreverserecoverytimeasafunction
0.001
0.01
130
120
110
100
0.1
90
80
70
60
50
40
1
1E-6
500
IKW40N65F5,IKP40N65F5
di
(D=t
ofdiodecurrentslope
(V
F
1E-5
R
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
700
p
/T)
i:
r
i
[K/W]:
i
[s]:
t
1E-4
p
,PULSEWIDTH[s]
T
T
j
j
=25°C, I
=150°C, I
900
1
0.08245484
7.3E-5
0.001
F
F
= 20A
2
0.144197
7.0E-4
= 20A
1100
0.01
Rev.1.1,2012-11-09
3
0.2151774
0.01235548
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
1300
0.1
4
0.1581708
0.08020881
1500
1