IKP40N65F5XKSA1 Infineon Technologies, IKP40N65F5XKSA1 Datasheet - Page 9
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IKP40N65F5XKSA1
Manufacturer Part Number
IKP40N65F5XKSA1
Description
IGBT Transistors IGBT PRODUCTS
Manufacturer
Infineon Technologies
Datasheet
1.IKW40N65F5FKSA1.pdf
(18 pages)
Specifications of IKP40N65F5XKSA1
Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
74 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
255 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-220-3
Continuous Collector Current Ic Max
46 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Part # Aliases
IKP40N65F5 SP000973412
Figure 5. Typicaloutputcharacteristic
Figure 7. Typicalcollector-emittersaturationvoltageas
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
120
100
80
60
40
20
0
0
0
V
V
GE
(T
afunctionofjunctiontemperature
(V
CE
=20V
vj
18V
15V
12V
10V
,COLLECTOR-EMITTERVOLTAGE[V]
T
GE
25
=150°C)
8V
7V
6V
5V
I
I
I
vj
C
C
C
=15V)
,JUNCTIONTEMPERATURE[°C]
=10A
=20A
=40A
1
50
2
75
100
3
125
Highspeedswitchingseriesfifthgeneration
4
150
175
5
9
Figure 6. Typicaltransfercharacteristic
Figure 8. Typicalswitchingtimesasafunctionof
1000
120
100
100
80
60
40
20
10
0
1
4.5
0
IKW40N65F5,IKP40N65F5
(V
collectorcurrent
(inductiveload,T
V
Figure E)
5.0
GE
CE
V
T
T
t
t
t
t
=15/0V,r
d(off)
f
d(on)
r
20
GE
=20V)
j
j
=25°C
=150°C
I
C
,GATE-EMITTERVOLTAGE[V]
,COLLECTORCURRENT[A]
5.5
40
G
6.0
=15 ,Dynamictestcircuitin
vj
=150°C,V
6.5
60
7.0
80
Rev.1.1,2012-11-09
CE
=400V,
7.5
100
8.0
120
8.5