IKP40N65F5XKSA1 Infineon Technologies, IKP40N65F5XKSA1 Datasheet - Page 6
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IKP40N65F5XKSA1
Manufacturer Part Number
IKP40N65F5XKSA1
Description
IGBT Transistors IGBT PRODUCTS
Manufacturer
Infineon Technologies
Datasheet
1.IKW40N65F5FKSA1.pdf
(18 pages)
Specifications of IKP40N65F5XKSA1
Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
74 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
255 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-220-3
Continuous Collector Current Ic Max
46 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Part # Aliases
IKP40N65F5 SP000973412
DiodeCharacteristic,atT
SwitchingCharacteristic,InductiveLoad,atT
IGBTCharacteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current I
Diode peak rate of fall of reverse
recoverycurrentduringt
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current I
Diode peak rate of fall of reverse
recoverycurrentduringt
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
b
b
vj
=25°C
t
t
t
t
E
E
E
t
Q
di
t
Q
di
Symbol Conditions
t
t
t
t
E
E
E
t
t
t
t
E
E
E
d(on)
r
d(off)
f
rr
rrm
rr
rrm
d(on)
r
d(off)
f
d(on)
r
d(off)
f
on
off
ts
on
off
ts
on
off
ts
rr
rr
rr
rr
/dt
/dt
Highspeedswitchingseriesfifthgeneration
T
V
V
r
C =30pF
L ,C fromFig.E
Energy losses include “tail” and
diode reverse recovery.
T
V
I
di
T
V
I
di
T
V
V
r
C =30pF
L ,C fromFig.E
Energy losses include “tail” and
diode reverse recovery.
T
V
V
r
C =30pF
L ,C fromFig.E
Energy losses include “tail” and
diode reverse recovery.
F
F
G
G
G
vj
vj
vj
vj
vj
CC
GE
R
=20.0A,
R
=5.0A,
CC
GE
CC
GE
F
F
=15.0 ,L =30nH,
vj
=15.0 ,L =30nH,
=15.0 ,L =30nH,
=25°C,
=25°C,
=25°C,
=150°C,
=150°C,
=400V,
/dt=1000A/µs
=400V,
/dt=1000A/µs
=150°C
=400V,I
=0.0/15.0V,
=400V,I
=0.0/15.0V,
=400V,I
=0.0/15.0V,
6
C
C
C
=5.0A,
=20.0A,
=5.0A,
IKW40N65F5,IKP40N65F5
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
-1030
-280
0.07
0.03
0.10
0.45
12.4
0.22
10.6
0.50
0.16
0.66
0.14
0.05
0.19
typ.
175
185
220
Rev.1.1,2012-11-09
20
10
60
33
20
14
15
18
12
4
5
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
A/µs
A/µs
Unit
mJ
mJ
mJ
µC
µC
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A