IKA15N65H5 Infineon Technologies, IKA15N65H5 Datasheet - Page 12

• Manufacturer Part Number: IKA15N65H5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKA15N65H5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 14 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 16.7 W
• Package / Case: PG-TO-220-3
• Mounting Style: Through Hole
• Part # Aliases: IKA15N65H5XKSA1

Figure 17. Typicalcapacitanceasafunctionof
0.001
Figure 19. Diodetransientthermalimpedanceasa
1000
0.01
100
0.1
10
1
1
1E-6 1E-5 1E-4 0.001 0.01
0
i:
r
i
[K/W]:
i
[s]:
V
CE
collector-emittervoltage
(V
functionofpulsewidth
(D=t
,COLLECTOR-EMITTERVOLTAGE[V]
1
0.9520941
2.1E-4
C
C
C
GE
5
iss
oss
rss
=0V,f=1MHz)
p
/T)
2
1.171948
1.1E-3
t
p
,PULSEWIDTH[s]
10
3
0.5287944
8.9E-3
15
4
0.4647577
0.09325149
0.1
20
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
5
1.671981
1.367755
1
Highspeedswitchingseriesfifthgeneration
25
6
0.8104246
7.182978
10
100
30
12
Figure 18. IGBTtransientthermalresistance
Figure 20. Typicalreverserecoverytimeasafunction
0.01
0.1
90
80
70
60
50
40
30
1
1E-6 1E-5 1E-4 0.001 0.01
600
i:
r
i
[K/W]:
i
[s]:
di
(D=t
ofdiodecurrentslope
(V
800
1
0.2571578
1.8E-4
F
R
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
p
/T)
1000
2
0.5731833
1.2E-3
t
p
,PULSEWIDTH[s]
T
T
j
j
=25°C, I
=150°C, I
1200
3
0.4460929
9.1E-3
F
F
= 7.5A
1400
= 7.5A
4
0.5209172
0.1021129
0.1
IKA15N65H5
Rev.1.1,2012-11-09
1600
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
5
1.804766
1.367234
1
1800
6
0.8978826
7.180227
10
2000
100