IKA15N65H5 Infineon Technologies, IKA15N65H5 Datasheet - Page 4

• Manufacturer Part Number: IKA15N65H5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKA15N65H5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 14 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 16.7 W
• Package / Case: PG-TO-220-3
• Mounting Style: Through Hole
• Part # Aliases: IKA15N65H5XKSA1

Maximumratings
ThermalResistance
Characteristic
Parameter
Collector-emitter voltage
DCcollectorcurrent,limitedbyT
T
T
Pulsedcollectorcurrent,t
TurnoffsafeoperatingareaV
Diodeforwardcurrent,limitedbyT
T
T
Diodepulsedcurrent,t
Gate-emitter voltage
TransientGate-emittervoltage(t
PowerdissipationT
PowerdissipationT
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M2.5 screw, TO220 Fullpak
Maximum of mounting processes: 3
Mounting Torque, M3 Screw, other packages
Maximum of mounting processes: 3
Isolation voltage for max. 60s, TO220 Fullpak
Parameter
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
C
C
C
C
=25°C
=100°C
=25°C
=100°C
C
C
=25°C
=100°C
p
limitedbyT
p
limitedbyT
CE
 650V,T
p
vjmax
=10µs,D<0.010)
vjmax
vjmax
Symbol Conditions
R
R
R
vjmax
th(j-c)
th(j-c)
th(j-a)
Highspeedswitchingseriesfifthgeneration
vj
 175°C
4
Symbol
V
I
I
-
I
I
V
P
T
T
M
V
C
Cpuls
F
Fpuls
vj
stg
CE
GE
tot
isol
-40...+175
-55...+150
Value
2500
14.0
45.0
45.0
12.3
45.0
33.3
16.7
Max.Value
650
±20
±30
260
8.5
7.3
0.5
0.6
IKA15N65H5
4.50
5.60
Rev.1.1,2012-11-09
65
Unit
Nm
°C
°C
°C
W
V
A
A
A
A
A
V
V
Unit
K/W
K/W
K/W