IKA15N65H5 Infineon Technologies, IKA15N65H5 Datasheet - Page 7

• Manufacturer Part Number: IKA15N65H5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKA15N65H5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 14 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 16.7 W
• Package / Case: PG-TO-220-3
• Mounting Style: Through Hole
• Part # Aliases: IKA15N65H5XKSA1

DiodeCharacteristic,atT
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current I
Diode peak rate of fall of reverse
recoverycurrentduringt
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current I
Diode peak rate of fall of reverse
recoverycurrentduringt
b
b
vj
=150°C
t
Q
di
t
Q
di
rr
rrm
rr
rrm
rr
rr
rr
rr
/dt
/dt
Highspeedswitchingseriesfifthgeneration
T
V
I
di
T
V
I
di
F
F
vj
vj
R
=7.5A,
R
=2.0A,
F
F
=150°C,
=150°C,
=400V,
/dt=1000A/µs
=400V,
/dt=1000A/µs
7
-
-
-
-
-
-
-
-
IKA15N65H5
-160
-310
0.42
11.0
0.21
10.5
Rev.1.1,2012-11-09
74
42
-
-
-
-
-
-
-
-
A/µs
A/µs
µC
µC
ns
ns
A
A