IPI200N25N3 G Infineon Technologies, IPI200N25N3 G Datasheet - Page 4

• Manufacturer Part Number: IPI200N25N3 G
• Description: MOSFET N-Channel 250V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPI200N25N3 G

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 64 A
• Resistance Drain-source Rds (on): 20 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-262-3
• Fall Time: 12 nS
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 20 nS
• Typical Turn-off Delay Time: 45 nS
• Part # Aliases: IPI200N25N3GAKSA1 IPI200N25N3GXK SP000714308

Rev. 2.4
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
320
280
240
200
160
120
10
10
10
10
10
80
40
0
DS
-1
3
2
1
0
C
10
); T
)
0
-1
C
p
=25 °C; D =0
50
10
0
V
T
DS
C
100
10
[°C]
[V]
1
DC
10 ms
100 µs
1 ms
150
10
10 µs
2
1 µs
200
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
10
10
10
70
60
50
40
30
20
10
C
0
-1
-2
0
); V
10
p
0
)
-5
0.02
0.01
0.05
GS
0.2
0.5
0.1
IPB200N25N3 G
single pulse
≥10 V
p
10
/T
-4
50
10
T
-3
C
t
100
p
[°C]
[s]
10
IPP200N25N3 G
-2
IPI200N25N3 G
150
10
-1
2011-07-14
200
10
0