IPI200N25N3 G Infineon Technologies, IPI200N25N3 G Datasheet - Page 6

• Manufacturer Part Number: IPI200N25N3 G
• Description: MOSFET N-Channel 250V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPI200N25N3 G

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 64 A
• Resistance Drain-source Rds (on): 20 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-262-3
• Fall Time: 12 nS
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 20 nS
• Typical Turn-off Delay Time: 45 nS
• Part # Aliases: IPI200N25N3GAKSA1 IPI200N25N3GXK SP000714308

Rev. 2.4
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
70
60
50
40
30
20
10
0
DS
=f(T
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=64 A; V
Coss
Crss
40
20
GS
=10 V
V
T
DS
j
60
98%
[°C]
80
[V]
Ciss
typ
100
120
140
180
160
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
IPB200N25N3 G
j
GS
-20
=V
0.5
175 °C
DS
20
V
T
270 µA
SD
j
60
[°C]
1
2700 µA
[V]
175°C, 98%
25 °C
25°C, 98%
IPP200N25N3 G
IPI200N25N3 G
100
1.5
140
2011-07-14
180
2