IPI200N25N3 G Infineon Technologies, IPI200N25N3 G Datasheet - Page 9
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IPI200N25N3 G
Manufacturer Part Number
IPI200N25N3 G
Description
MOSFET N-Channel 250V MOSFET
Manufacturer
Infineon Technologies
Datasheet
1.IPI200N25N3_G.pdf
(11 pages)
Specifications of IPI200N25N3 G
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
64 A
Resistance Drain-source Rds (on)
20 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-262-3
Fall Time
12 nS
Gate Charge Qg
64 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
300 W
Rise Time
20 nS
Typical Turn-off Delay Time
45 nS
Part # Aliases
IPI200N25N3GAKSA1 IPI200N25N3GXK SP000714308
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
PG-TO263-3: Outline
Rev. 2.4
page 9
2011-07-14