FCPF600N60Z Fairchild Semiconductor, FCPF600N60Z Datasheet - Page 3

• Manufacturer Part Number: FCPF600N60Z
• Description: MOSFET 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCPF600N60Z

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.4 A
• Resistance Drain-source Rds (on): 600 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220F-3
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 6.7 S
• Gate Charge Qg: 20 nC
• Minimum Operating Temperature: - 50 C
• Power Dissipation: 28 W
• Rise Time: 7 ns
• Typical Turn-off Delay Time: 39 ns

©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
Typical Performance Characteristics
10000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1000
Figure 1. On-Region Characteristics
100
1.2
1.0
0.8
0.6
0.4
0.2
0.5
0.4
10
20
10
1
1
0.1
0.2
0
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
V
*Note:
GS
1. V
2. f = 1MHz
= 10.0V
Drain Current and Gate Voltage
GS
V
V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
DS
4
DS
= 0V
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
1
I
D
, Drain Current [A]
1
8
V
V
GS
GS
= 10V
= 20V
10
*Notes:
1. 250
2. T
12
*Note: T
C
= 25
μ
s Pulse Test
100
o
16
C
C
10
= 25
C
C
C
rss
oss
o
iss
C
600
20
20
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.2
100
50
10
10
10
1
1
8
6
4
2
0
2
0.2
0
*Notes:
1. V
2. 250
Variation vs. Source Current
and Temperature
V
DS
3
0.4
SD
μ
150
V
, Body Diode Forward Voltage [V]
5
= 20V
s Pulse Test
GS
Q
o
g
, Gate-Source Voltage[V]
C
, Total Gate Charge [nC]
4
0.6
V
V
V
DS
DS
DS
10
= 120V
= 300V
= 480V
150
-55
5
0.8
o
o
C
C
15
*Notes:
1. V
2. 250
25
6
1.0
*Note: I
25
o
GS
C
o
μ
C
= 0V
s Pulse Test
www.fairchildsemi.com
20
D
7
1.2
= 3.7A
8
1.4
25