FCPF600N60Z Fairchild Semiconductor, FCPF600N60Z Datasheet - Page 5
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FCPF600N60Z
Manufacturer Part Number
FCPF600N60Z
Description
MOSFET 600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FCPF600N60Z.pdf
(10 pages)
Specifications of FCPF600N60Z
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.4 A
Resistance Drain-source Rds (on)
600 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220F-3
Fall Time
9 ns
Forward Transconductance Gfs (max / Min)
6.7 S
Gate Charge Qg
20 nC
Minimum Operating Temperature
- 50 C
Power Dissipation
28 W
Rise Time
7 ns
Typical Turn-off Delay Time
39 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCPF600N60Z
Manufacturer:
ON/安森美
Quantity:
20 000
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
Typical Performance Characteristics
Figure 14. Transient Thermal Response Curve - FCPF600N60Z
Figure 13. Transient Thermal Response Curve - FCP600N60Z
0.01
0.1
0.1
2
1
5
1
10
10
-5
-5
0.02
Single pulse
0.2
0.1
0.05
0.01
0.5
0.05
0.02
0.01
Single pulse
0.5
0.2
0.1
10
-4
10
-4
10
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
-3
(Continued)
10
-3
10
-2
5
10
10
-1
-2
*Notes:
*Notes:
1. Z
2. Duty Factor, D= t
3. T
1. Z
2. Duty Factor, D= t
3. T
P
P
10
DM
DM
θ
JM
θ
JM
JC
0
JC
- T
(t) = 4.5
(t) = 1.4
- T
10
C
C
= P
t
= P
t
-1
1
1
t
t
2
2
o
DM
10
o
DM
C/W Max.
C/W Max.
1
* Z
* Z
1
1
θ
/t
θ
/t
JC
JC
2
2
(t)
(t)
100
10
0
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