FCPF600N60Z Fairchild Semiconductor, FCPF600N60Z Datasheet - Page 6

• Manufacturer Part Number: FCPF600N60Z
• Description: MOSFET 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCPF600N60Z

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.4 A
• Resistance Drain-source Rds (on): 600 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220F-3
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 6.7 S
• Gate Charge Qg: 20 nC
• Minimum Operating Temperature: - 50 C
• Power Dissipation: 28 W
• Rise Time: 7 ns
• Typical Turn-off Delay Time: 39 ns

Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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FCP600N60Z / FCPF600N60Z Rev. C2