HUF76639S3ST_F085 Fairchild Semiconductor, HUF76639S3ST_F085 Datasheet - Page 2

• Manufacturer Part Number: HUF76639S3ST_F085
• Description: MOSFET 50A, 100V, 0.026 Ohm N-Channel UltraFET
• Manufacturer: Fairchild Semiconductor

Specifications of HUF76639S3ST_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 0.026 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Fall Time: 136 ns
• Gate Charge Qg: 86 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 180 W
• Rise Time: 207 ns
• Typical Turn-off Delay Time: 83 ns

Electrical Specifications
Source to Drain Diode Specifications
©2012 Fairchild Semiconductor Corporation
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
PARAMETER
PARAMETER
T
GS
GS
C
= 25
= 4.5V)
= 10V)
SYMBOL
SYMBOL
o
V
r
Q
BV
t
t
Q
DS(ON)
C, Unless Otherwise Specified
t
t
d(OFF)
d(OFF)
C
C
GS(TH)
Q
R
R
I
I
d(ON)
t
d(ON)
t
g(TOT)
C
Q
Q
GSS
t
t
Q
V
DSS
OFF
OFF
g(TH)
OSS
ON
ON
RSS
g(5)
ISS
t
DSS
t
t
t
t
SD
RR
gs
gd
r
r
rr
JC
f
f
JA
I
I
V
V
V
V
I
TO-263
V
V
(Figures 15, 21, 22)
V
V
(Figures 16, 21, 22)
V
V
V
V
f = 1MHz
(Figure 13)
I
I
I
I
D
D
D
SD
SD
SD
SD
DS
DS
GS
GS
DD
GS
DD
GS
GS
GS
GS
DS
= 250 A, V
= 250 A, V
= 51A, V
= 35A
= 15A
= 35A, dI
= 35A, dI
= 95V, V
= 90V, V
= 25V, V
= 16V
= V
= 50V, I
= 50V, I
= 0V to 10V
= 0V to 5V
= 0V to 1V
4.5V, R
10V, R
DS
, I
GS
D
D
D
SD
SD
GS
GS
GS
GS
GS
GS
GS
= 10V (Figures 9, 10)
= 34A
= 51A
TEST CONDITIONS
= 250 A (Figure 11)
TEST CONDITIONS
/dt = 100A/ s
/dt = 100A/ s
= 0V
= 0V, T
= 0V,
= 12
= 0V , T
= 0V (Figure 12)
= 12
V
I
I
(Figures 14, 19, 20)
D
g(REF)
C
DD
C
= 35A,
= 150
= -40
= 50V,
= 1.0mA
o
o
C
C (Figure 12)
MIN
100
MIN
90
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.023
2400
TYP
207
136
151
110
520
140
TYP
2.0
17
83
10
55
71
39
19
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HUF76639S3ST_F085 Rev. C1
0.026
MAX
MAX
0.83
1.25
250
336
328
392
137
503
2.4
1.0
100
62
96
86
47
1
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
o
o
C/W
C/W
nA
nC
nC
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A
A