HUF76639S3ST_F085 Fairchild Semiconductor, HUF76639S3ST_F085 Datasheet - Page 6

• Manufacturer Part Number: HUF76639S3ST_F085
• Description: MOSFET 50A, 100V, 0.026 Ohm N-Channel UltraFET
• Manufacturer: Fairchild Semiconductor

Specifications of HUF76639S3ST_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 0.026 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Fall Time: 136 ns
• Gate Charge Qg: 86 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 180 W
• Rise Time: 207 ns
• Typical Turn-off Delay Time: 83 ns

Test Circuits and Waveforms
©2012 Fairchild Semiconductor Corporation
VARY t
REQUIRED PEAK I
0V
V
GS
I
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
g(REF)
P
FIGURE 21. SWITCHING TIME TEST CIRCUIT
TO OBTAIN
FIGURE 19. GATE CHARGE TEST CIRCUIT
V
t
GS
P
V
AS
GS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
R
AS
DS
L
DUT
R
DUT
L
0.01
L
-
+
V
DD
+
-
+
-
V
V
DD
DD
I
V
g(REF)
0
0
DD
V
0
0
0
V
V
GS
DS
GS
10%
V
= 1V
GS
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
FIGURE 22. SWITCHING TIME WAVEFORM
FIGURE 20. GATE CHARGE WAVEFORMS
Q
t
d(ON)
90%
Q
gs
g(TH)
50%
t
ON
10%
t
r
I
AS
Q
PULSE WIDTH
Q
V
g(5)
DS
gd
t
P
Q
g(TOT)
BV
t
AV
DSS
V
GS
HUF76639S3ST_F085 Rev. C1
= 5V
t
d(OFF)
90%
V
t
OFF
DS
50%
t
f
10%
V
GS
V
90%
DD
= 10V