BCP51-10 /T3 NXP Semiconductors, BCP51-10 /T3 Datasheet - Page 14
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BCP51-10 /T3
Manufacturer Part Number
BCP51-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet
1.BCP51-10_T3.pdf
(22 pages)
Specifications of BCP51-10 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
63 at 150 mA at 2 V
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-10,135
NXP Semiconductors
8. Test information
9. Package outline
BCP51_BCX51_BC51PA
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 19. Package outline SOT223 (SC-73)
Fig 20. Package outline SOT89 (SC-62/TO-243)
All information provided in this document is subject to legal disclaimers.
Dimensions in mm
Dimensions in mm
Rev. 9 — 13 October 2011
2.6
2.4
7.3
6.7
3.7
3.3
0.53
0.40
1
1.5
1
4.6
4.4
1.8
1.4
2.3
3
BCP51; BCX51; BC51PA
2
6.7
6.3
3.1
2.9
4.6
2
3
45 V, 1 A PNP medium power transistors
4
0.48
0.35
3
0.8
0.6
1.2
0.8
1.1
0.7
1.6
1.4
1.8
1.5
0.32
0.22
0.44
0.23
4.25
3.75
04-11-10
06-08-29
© NXP B.V. 2011. All rights reserved.
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