BCP51-10 /T3 NXP Semiconductors, BCP51-10 /T3 Datasheet - Page 21
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BCP51-10 /T3
Manufacturer Part Number
BCP51-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet
1.BCP51-10_T3.pdf
(22 pages)
Specifications of BCP51-10 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
63 at 150 mA at 2 V
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-10,135
NXP Semiconductors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
14. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BCP51_BCX51_BC51PA
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 13 October 2011
salesaddresses@nxp.com
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
BCP51; BCX51; BC51PA
45 V, 1 A PNP medium power transistors
© NXP B.V. 2011. All rights reserved.
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