BCP51-10 /T3 NXP Semiconductors, BCP51-10 /T3 Datasheet - Page 8
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BCP51-10 /T3
Manufacturer Part Number
BCP51-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet
1.BCP51-10_T3.pdf
(22 pages)
Specifications of BCP51-10 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
63 at 150 mA at 2 V
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-10,135
NXP Semiconductors
BCP51_BCX51_BC51PA
Product data sheet
Fig 6.
Fig 7.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
–1
–1
1
1
3
2
3
2
10
10
FR4 PCB, mounting pad for collector 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
–5
–5
duty cycle = 1
0
duty cycle = 1
0.5
0.2
0.05
0.5
0.2
0.05
0.01
0
0.75
0.33
0.02
0.01
0.75
0.33
0.02
0.1
0.1
10
10
–4
–4
10
10
–3
–3
All information provided in this document is subject to legal disclaimers.
10
10
2
–2
–2
Rev. 9 — 13 October 2011
10
10
–1
–1
BCP51; BCX51; BC51PA
1
1
45 V, 1 A PNP medium power transistors
10
10
10
10
2
2
© NXP B.V. 2011. All rights reserved.
t
t
p
p
006aac679
006aac680
(s)
(s)
10
10
3
3
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