BCP51-10 /T3 NXP Semiconductors, BCP51-10 /T3 Datasheet - Page 16
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BCP51-10 /T3
Manufacturer Part Number
BCP51-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet
1.BCP51-10_T3.pdf
(22 pages)
Specifications of BCP51-10 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
63 at 150 mA at 2 V
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-10,135
NXP Semiconductors
11. Soldering
BCP51_BCX51_BC51PA
Product data sheet
Fig 22. Reflow soldering footprint SOT223 (SC-73)
Fig 23. Wave soldering footprint SOT223 (SC-73)
1.9
(4×)
1.3
(4×)
1.2
1
All information provided in this document is subject to legal disclaimers.
1
2.7
2.3
Rev. 9 — 13 October 2011
6.15
8.9
6.7
1.1
3.85
(3×)
(3×)
3.6
3.5
1.2
1.3
7
4
2
4
2
0.3
2.3
2.7
3
(2×)
1.9
BCP51; BCX51; BC51PA
3
3.9
45 V, 1 A PNP medium power transistors
6.2
6.1
(3×)
1.9
7.65
8.7
Dimensions in mm
Dimensions in mm
direction during soldering
© NXP B.V. 2011. All rights reserved.
preferred transport
solder lands
solder resist
occupied area
solder lands
solder resist
solder paste
occupied area
sot223_fr
sot223_fw
16 of 22