BCP51-10 /T3 NXP Semiconductors, BCP51-10 /T3 Datasheet - Page 2
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BCP51-10 /T3
Manufacturer Part Number
BCP51-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet
1.BCP51-10_T3.pdf
(22 pages)
Specifications of BCP51-10 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
63 at 150 mA at 2 V
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-10,135
NXP Semiconductors
2. Pinning information
BCP51_BCX51_BC51PA
Product data sheet
Table 2.
Table 3.
Symbol
h
Pin
SOT223
1
2
3
4
SOT89
1
2
3
SOT1061
1
2
3
FE
Parameter
DC current gain
Quick reference data
Pinning
h
h
FE
FE
base
collector
emitter
collector
emitter
collector
base
base
emitter
collector
Description
All information provided in this document is subject to legal disclaimers.
selection -10
selection -16
Rev. 9 — 13 October 2011
…continued
V
V
V
Conditions
I
I
I
C
C
C
CE
CE
CE
= 150 mA
= 150 mA
= 150 mA
BCP51; BCX51; BC51PA
= 2 V;
= 2 V;
= 2 V;
45 V, 1 A PNP medium power transistors
Simplified outline
Transparent top view
1
3
1
2
3
2
Min
63
63
100
4
1
3
2
Typ
-
-
-
Graphic symbol
© NXP B.V. 2011. All rights reserved.
Max
250
160
250
1
006aaa231
1
3
sym028
sym013
2, 4
3
3
2
2
1
Unit
2 of 22