BCP51-10 /T3 NXP Semiconductors, BCP51-10 /T3 Datasheet - Page 17
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BCP51-10 /T3
Manufacturer Part Number
BCP51-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet
1.BCP51-10_T3.pdf
(22 pages)
Specifications of BCP51-10 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
63 at 150 mA at 2 V
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-10,135
NXP Semiconductors
BCP51_BCX51_BC51PA
Product data sheet
Fig 24. Reflow soldering footprint SOT89 (SC-62/TO-243)
Fig 25. Wave soldering footprint SOT89 (SC-62/TO-243)
4.6
7.6
0.85
3.5
1.2
(2×)
0.5
1.8
(3×)
0.2
1
All information provided in this document is subject to legal disclaimers.
(2×)
Rev. 9 — 13 October 2011
1.5
1.5
1.9
4.75
2.25
3.95
1.9
1.2
2
6.6
2.4
0.7
5.3
1.5
1.9
BCP51; BCX51; BC51PA
(3×)
(3×)
0.6
0.7
(2×)
1.7
1.1
45 V, 1 A PNP medium power transistors
0.5
4.85
preferred transport direction during soldering
Dimensions in mm
Dimensions in mm
© NXP B.V. 2011. All rights reserved.
solder lands
solder resist
occupied area
solder lands
solder resist
solder paste
occupied area
sot089_fw
sot089_fr
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