BCP51-10 /T3 NXP Semiconductors, BCP51-10 /T3 Datasheet - Page 18
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BCP51-10 /T3
Manufacturer Part Number
BCP51-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet
1.BCP51-10_T3.pdf
(22 pages)
Specifications of BCP51-10 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
63 at 150 mA at 2 V
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-10,135
NXP Semiconductors
BCP51_BCX51_BC51PA
Product data sheet
Fig 26. Reflow soldering footprint SOT1061 (HUSON3)
2.3
Reflow soldering is the only recommended soldering method.
1.05
All information provided in this document is subject to legal disclaimers.
0.6
Rev. 9 — 13 October 2011
0.55
solder paste = solder lands
solder resist
BCP51; BCX51; BC51PA
occupied area
45 V, 1 A PNP medium power transistors
2.1
1.3
0.4
0.5
1.6
1.7
0.5 (2×)
0.4 (2×)
Dimensions in mm
0.5 (2×)
sot1061_fr
0.25
0.25
0.25
© NXP B.V. 2011. All rights reserved.
0.6 (2×)
1.1
1.2
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