BCP51-10 /T3 NXP Semiconductors, BCP51-10 /T3 Datasheet - Page 3
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BCP51-10 /T3
Manufacturer Part Number
BCP51-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet
1.BCP51-10_T3.pdf
(22 pages)
Specifications of BCP51-10 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
63 at 150 mA at 2 V
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-10,135
NXP Semiconductors
3. Ordering information
4. Marking
BCP51_BCX51_BC51PA
Product data sheet
Table 4.
[1]
Table 5.
Type number
BCP51
BCX51
BC51PA
Type number
BCP51
BCP51-10
BCP51-16
BCX51
BCX51-10
BCX51-16
BC51PA
BC51-10PA
BC51-16PA
Valid for all available selection groups.
Ordering information
Marking codes
[1]
All information provided in this document is subject to legal disclaimers.
Package
Name
SC-73
SC-62
HUSON3 plastic thermal enhanced ultra thin small outline
Rev. 9 — 13 October 2011
plastic surface-mounted package with increased
heatsink; 4 leads
plastic surface-mounted package; collector pad for good
heat transfer; 3 leads
package; no leads; 3 terminals; body 2 2 0.65 mm
Description
BCP51; BCX51; BC51PA
Marking code
BCP51
BCP51/10
BCP51/16
AA
AC
AD
BP
BQ
BR
45 V, 1 A PNP medium power transistors
© NXP B.V. 2011. All rights reserved.
Version
SOT223
SOT89
SOT1061
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