BCP51-10 /T3 NXP Semiconductors, BCP51-10 /T3 Datasheet - Page 5
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BCP51-10 /T3
Manufacturer Part Number
BCP51-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet
1.BCP51-10_T3.pdf
(22 pages)
Specifications of BCP51-10 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
63 at 150 mA at 2 V
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-10,135
NXP Semiconductors
BCP51_BCX51_BC51PA
Product data sheet
Fig 1.
Fig 3.
P
(W)
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
tot
1.5
1.0
0.5
0.0
–75
Power derating curves SOT223
Power derating curves SOT1061
–25
(1)
(2)
(3)
25
75
P
(W)
tot
2.0
1.5
1.0
0.5
0.0
–75
125
All information provided in this document is subject to legal disclaimers.
T
006aac674
amb
(°C)
2
2
–25
175
Rev. 9 — 13 October 2011
(1)
(2)
(3)
(4)
(5)
25
2
Fig 2.
75
BCP51; BCX51; BC51PA
2
2
P
(W)
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
tot
1.5
1.0
0.5
0.0
–75
Power derating curves SOT89
125
T
006aac676
amb
45 V, 1 A PNP medium power transistors
(°C)
–25
175
(1)
(2)
(3)
25
75
125
© NXP B.V. 2011. All rights reserved.
T
006aac675
amb
(°C)
2
2
175
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