BCP51-10 /T3 NXP Semiconductors, BCP51-10 /T3 Datasheet - Page 4
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BCP51-10 /T3
Manufacturer Part Number
BCP51-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet
1.BCP51-10_T3.pdf
(22 pages)
Specifications of BCP51-10 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
63 at 150 mA at 2 V
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-10,135
NXP Semiconductors
5. Limiting values
BCP51_BCX51_BC51PA
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Symbol
V
V
T
V
I
I
I
I
P
T
T
C
CM
B
BM
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
BCP51
BCX51
BC51PA
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 13 October 2011
BCP51; BCX51; BC51PA
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
p
p
amb
1 ms
1 ms
25 C
45 V, 1 A PNP medium power transistors
[1]
[2]
[3]
[1]
[2]
[3]
[1]
[2]
[3]
[4]
[5]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
55
65
© NXP B.V. 2011. All rights reserved.
Max
45
45
5
1
2
0.3
0.3
0.65
1.00
1.35
0.50
0.95
1.35
0.42
0.83
1.10
0.81
1.65
150
+150
+150
2
.
Unit
V
V
V
A
A
A
A
W
W
W
W
W
W
W
W
W
W
W
C
C
C
2
2
.
.
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