AT45DB161D-SU Atmel, AT45DB161D-SU Datasheet - Page 8

• Manufacturer Part Number: AT45DB161D-SU
• Description: IC FLASH 16MBIT 66MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT45DB161D-SU

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 16M (4096 pages x 528 bytes)
• Speed: 66MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Architecture: Sectored
• Interface Type: SPI
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 15 mA
• Mounting Style: SMD/SMT
• Organization: 128 KB x 16
• Current, Input, Leakage: 1 μA
• Current, Operating: 11 mA (Read), 12 mA (Program/Erase)
• Current, Output, Leakage: 1
• Data Retention: 20 yrs.
• Density: 16M
• Package Type: EIAJ SOIC
• Temperature, Operating: -40 to +85 °C
• Time, Access: 6 ns
• Time, Address Hold: 5
• Time, Address Setup: 5
• Time, Fall: 6.8 ns
• Time, Rise: 6.8 ns
• Voltage, Input, High: 1.89 to 2.52 V
• Voltage, Input, Low: 0.81 to 1.08 V
• Voltage, Output, High: 2.5 V
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 2.7 to 3.6 V
• Memory Configuration: 4096 Pages X 528 Bytes
• Clock Frequency: 66MHz
• Supply Voltage Range: 2.5V To 3.6V, 2.7V To 3.6V
• Rohs Compliant: Yes
• Access Time (max): 6ns
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7.
7.1
7.2
7.3
7.4
8
Program and Erase Commands
Buffer Write
Data can be clocked in from the input pin (SI) into either buffer 1 or buffer 2. To load data into the standard Atmel
DataFlash buffer (528-bytes), a 1-byte opcode, 84H for buffer 1 or 87H for buffer 2, must be clocked into the
device, followed by three address bytes comprised of 14 don’t care bits and 10 buffer address bits (BFA9 - BFA0).
The 10 buffer address bits specify the first byte in the buffer to be written. To load data into the binary buffers (512-
bytes each), a 1-byte opcode 84H for buffer 1 or 87H for buffer 2, must be clocked into the device, followed by
three address bytes comprised of 15 don’t care bits and nine buffer address bits (BFA8 - BFA0). The nine buffer
address bits specify the first byte in the buffer to be written. After the last address byte has been clocked into the
device, data can then be clocked in on subsequent clock cycles. If the end of the data buffer is reached, the device
will wrap around back to the beginning of the buffer. Data will continue to be loaded into the buffer until a low-to-
high transition is detected on the CS pin.
Buffer to Main Memory Page Program with Built-in Erase
Data written into either buffer 1 or buffer 2 can be programmed into the main memory. A 1-byte opcode, 83H for
buffer 1 or 86H for buffer 2, must be clocked into the device. For the standard DataFlash page size (528-bytes), the
opcode must be followed by three address bytes consist of two don’t care bits, 12 page address bits (PA11 - PA0)
that specify the page in the main memory to be written and 10 don’t care bits. To perform a buffer to main memory
page program with built-in erase for the binary page size (512-bytes), the opcode 83H for buffer 1 or 86H for buffer
2, must be clocked into the device followed by three address bytes consisting of three don’t care bits 12 page
address bits (A20 - A9) that specify the page in the main memory to be written and nine don’t care bits. When a
low-to-high transition occurs on the CS pin, the part will first erase the selected page in main memory (the erased
state is a logic 1) and then program the data stored in the buffer into the specified page in main memory. Both the
erase and the programming of the page are internally self-timed and should take place in a maximum time of t
During this time, the status register and the RDY/BUSY pin will indicate that the part is busy.
Buffer to Main Memory Page Program without Built-in Erase
A previously-erased page within main memory can be programmed with the contents of either buffer 1 or buffer 2.
A 1-byte opcode, 88H for buffer 1 or 89H for buffer 2, must be clocked into the device. For the standard DataFlash
page size (528-bytes), the opcode must be followed by three address bytes consist of two don’t care bits, 12 page
address bits (PA11 - PA0) that specify the page in the main memory to be written and 10 don’t care bits. To
perform a buffer to main memory page program without built-in erase for the binary page size (512-bytes), the
opcode 88H for buffer 1 or 89H for buffer 2, must be clocked into the device followed by three address bytes
consisting of three don’t care bits, 12 page address bits (A20 - A9) that specify the page in the main memory to be
written and nine don’t care bits. When a low-to-high transition occurs on the CS pin, the part will program the data
stored in the buffer into the specified page in the main memory. It is necessary that the page in main memory that
is being programmed has been previously erased using one of the erase commands (Page Erase or Block Erase).
The programming of the page is internally self-timed and should take place in a maximum time of t
time, the status register and the RDY/BUSY pin will indicate that the part is busy.
Page Erase
The Page Erase command can be used to individually erase any page in the main memory array allowing the
Buffer to Main Memory Page Program to be utilized at a later time. To perform a page erase in the standard
DataFlash page size (528-bytes), an opcode of 81H must be loaded into the device, followed by three address
bytes comprised of two don’t care bits, 12 page address bits (PA11 - PA0) that specify the page in the main
memory to be erased and 10 don’t care bits. To perform a page erase in the binary page size (512-bytes), the
opcode 81H must be loaded into the device, followed by three address bytes consist of three don’t care bits, 12
Atmel AT45DB161D
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