BTS117 Infineon Technologies, BTS117 Datasheet - Page 4

• Manufacturer Part Number: BTS117
• Description: IC LOW SIDE SW PWR 3.5A TO-220-3
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BTS117

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 80 mOhm
• Current - Output / Channel: 3.5A
• Current - Peak Output: 25A
• Voltage - Supply: 2.2 V ~ 10 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Module Configuration: Low Side
• Peak Output Current: 3.5A
• Output Resistance: 0.08ohm
• Input Delay: 40µs
• Output Delay: 70µs
• Supply Voltage Range: 1.3V To 10V
• Driver Case Style: TO-220
• No. Of Pins: 3
• Packages: P-TO220-3
• Channels: 1.0
• Vds (max): 60.0 V
• Id(nom): 3.5 A
• Rds (on) (max): 100.0 mOhm
• Id(lim) (min): 7.0 A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BTS117IN; BTS117NK; SP000011195

Datasheet
2 Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
1 Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Characteristics
Initial peak short circuit current limit
V
Current limit
V
T
Dynamic Characteristics
Turn-on time
R
Turn-off time
R
Slew rate on
R
Slew rate off
R
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
I
I
Inverse Diode
Inverse diode forward voltage
I
Electrical Characteristics
Parameter
at T
D
D
F
j
IN
IN
L
L
L
L
= -40...+150 °C
= 5*3.5A, t
= 3.5 A, T
= 3.5 A, T
= 4.7 Ω, V
= 4.7 Ω, V
= 4.7 Ω, V
= 4.7 Ω, V
= 10 V, V
= 10 V, V
j
=25°C, unless otherwise specified
j
j
1)
m
DS
DS
IN
IN
IN
IN
= 25 °C, V
= 150 °C, V
= 300 µS, V
= 0 to 10 V, V
= 10 to 0 V, V
= 0 to 10 V, V
= 10 to 0 V, V
= 12 V
= 12 V, t
V
V
70 to 50% V
50 to 70% V
IN
IN
to 90% I
to 10% I
bb
m
bb
2)
= 32 V
IN
= 350 µs,
= 32 V
D
D
bb
bb
bb
bb
= 0 V
bb
bb
:
:
= 12 V
= 12 V
= 12 V
= 12 V
:
:
4
I
I
t
t
-dV
dV
T
E
V
Symbol
D(SCp)
D(lim)
on
off
jt
AS
SD
DS
DS
/dt
/dt
off
on
Smart Low Side Power Switch
1000
min.
225
150
7
-
-
-
-
-
-
Values
typ.
165
25
10
40
70
--
--
1
1
1
Rev. 1.3, 2008-12-10
HITFET BTS 117
max.
150
15
70
--
--
3
3
-
-
-
A
µs
V/µs
°C
mJ
V
Unit