DSPIC30F6014-30I/PF Microchip Technology, DSPIC30F6014-30I/PF Datasheet - Page 54

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DSPIC30F6014-30I/PF

Manufacturer Part Number
DSPIC30F6014-30I/PF
Description
IC DSPIC MCU/DSP 144K 80TQFP
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr

Specifications of DSPIC30F6014-30I/PF

Core Processor
dsPIC
Core Size
16-Bit
Speed
30 MIPs
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
AC'97, Brown-out Detect/Reset, I²S, LVD, POR, PWM, WDT
Number Of I /o
68
Program Memory Size
144KB (48K x 24)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-TQFP, 80-VQFP
Core Frequency
40MHz
Core Supply Voltage
5.5V
Embedded Interface Type
CAN, I2C, SPI, UART
No. Of I/o's
68
Flash Memory Size
144KB
Supply Voltage Range
2.5V To 5.5V
Package
80TQFP
Device Core
dsPIC
Family Name
dsPIC30
Maximum Speed
30 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
16 Bit
Number Of Programmable I/os
68
Interface Type
3-Wire/AC97/CAN/I2C/I2S/SPI/UART
On-chip Adc
16-chx12-bit
Number Of Timers
5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DM300024 - KIT DEMO DSPICDEM 1.1DM300004-2 - BOARD DEMO DSPICDEM.NET 2DM300004-1 - BOARD DEMO DSPICDEM.NET 1AC164314 - MODULE SKT FOR PM3 80PFAC30F001 - MODULE SOCKET DSPIC30F 80TQFPXLT80PT2 - SOCKET TRANSITION ICE 80TQFPDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
DSPIC30F601430IPF

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dsPIC30F6011/6012/6013/6014
6.4
The dsPIC30F Flash program memory is organized
into rows and panels. Each row consists of 32 instruc-
tions or 96 bytes. Each panel consists of 128 rows or
4K x 24 instructions. RTSP allows the user to erase one
row (32 instructions) at a time and to program four
instructions at one time. RTSP may be used to program
multiple program memory panels, but the table pointer
must be changed at each panel boundary.
Each panel of program memory contains write latches
that hold 32 instructions of programming data. Prior to
the actual programming operation, the write data must
be loaded into the panel write latches. The data to be
programmed into the panel is loaded in sequential
order into the write latches: instruction 0, instruction 1,
etc. The instruction words loaded must always be from
a group of 32 boundary.
The basic sequence for RTSP programming is to set up
a table pointer, then do a series of TBLWT instructions
to load the write latches. Programming is performed by
setting the special bits in the NVMCON register. Four
TBLWTL and four TBLWTH instructions are required to
load the four instructions. If multiple panel program-
ming is required, the table pointer needs to be changed
and the next set of multiple write latches written.
All of the table write operations are single word writes
(2 instruction cycles) because only the table latches
are written. A programming cycle is required for
programming each row.
The Flash program memory is readable, writable, and
erasable during normal operation over the entire V
range.
DS70117F-page 52
RTSP Operation
DD
6.5
The four SFRs used to read and write the program
Flash memory are:
• NVMCON
• NVMADR
• NVMADRU
• NVMKEY
6.5.1
The NVMCON register controls which blocks are to be
erased, which memory type is to be programmed and
start of the programming cycle.
6.5.2
The NVMADR register is used to hold the lower two
bytes of the effective address. The NVMADR register
captures the EA<15:0> of the last table instruction that
has been executed and selects the row to write.
6.5.3
The NVMADRU register is used to hold the upper byte
of the effective address. The NVMADRU register cap-
tures the EA<23:16> of the last table instruction that
has been executed.
6.5.4
NVMKEY is a write only register that is used for write
protection. To start a programming or an erase
sequence, the user must consecutively write 0x55 and
0xAA to the NVMKEY register. Refer to Section 6.6
“Programming Operations” for further details.
Note:
Control Registers
NVMCON REGISTER
NVMADR REGISTER
NVMADRU REGISTER
NVMKEY REGISTER
The user can also directly write to the
NVMADR and NVMADRU registers to
specify a program memory address for
erasing or programming.
© 2006 Microchip Technology Inc.

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