DSPIC30F6014-30I/PF Microchip Technology, DSPIC30F6014-30I/PF Datasheet - Page 56

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DSPIC30F6014-30I/PF

Manufacturer Part Number
DSPIC30F6014-30I/PF
Description
IC DSPIC MCU/DSP 144K 80TQFP
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr

Specifications of DSPIC30F6014-30I/PF

Core Processor
dsPIC
Core Size
16-Bit
Speed
30 MIPs
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
AC'97, Brown-out Detect/Reset, I²S, LVD, POR, PWM, WDT
Number Of I /o
68
Program Memory Size
144KB (48K x 24)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-TQFP, 80-VQFP
Core Frequency
40MHz
Core Supply Voltage
5.5V
Embedded Interface Type
CAN, I2C, SPI, UART
No. Of I/o's
68
Flash Memory Size
144KB
Supply Voltage Range
2.5V To 5.5V
Package
80TQFP
Device Core
dsPIC
Family Name
dsPIC30
Maximum Speed
30 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
16 Bit
Number Of Programmable I/os
68
Interface Type
3-Wire/AC97/CAN/I2C/I2S/SPI/UART
On-chip Adc
16-chx12-bit
Number Of Timers
5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DM300024 - KIT DEMO DSPICDEM 1.1DM300004-2 - BOARD DEMO DSPICDEM.NET 2DM300004-1 - BOARD DEMO DSPICDEM.NET 1AC164314 - MODULE SKT FOR PM3 80PFAC30F001 - MODULE SOCKET DSPIC30F 80TQFPXLT80PT2 - SOCKET TRANSITION ICE 80TQFPDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
DSPIC30F601430IPF

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dsPIC30F6011/6012/6013/6014
6.6.3
Example 6-2 shows a sequence of instructions that can
be used to load the 96 bytes of write latches. 32
TBLWTL and 32 TBLWTH instructions are needed to
load the write latches selected by the table pointer.
EXAMPLE 6-2:
6.6.4
For protection, the write initiate sequence for NVMKEY
must be used to allow any erase or program operation
to proceed. After the programming command has been
EXAMPLE 6-3:
DS70117F-page 54
; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled
; Perform the TBLWT instructions to write the latches
; 0th_program_word
; 1st_program_word
;
; 31st_program_word
Note: In Example 6-2, the contents of the upper byte of W3 has no effect.
2nd_program_word
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
MOV
MOV
MOV
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
LOADING WRITE LATCHES
INITIATING THE PROGRAMMING
SEQUENCE
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
#0x0000,W0
W0
#0x6000,W0
#LOW_WORD_0,W2
#HIGH_BYTE_0,W3
#LOW_WORD_1,W2
#HIGH_BYTE_1,W3
#LOW_WORD_2,W2
#HIGH_BYTE_2,W3
#LOW_WORD_31,W2
#HIGH_BYTE_31,W3
,
,
LOADING WRITE LATCHES
,
,
,
,
,
,
,
,
,
INITIATING A PROGRAMMING SEQUENCE
NVMKEY
NVMKEY
TBLPAG
[W0]
[W0++]
[W0]
[W0++]
[W0]
[W0++]
[W0]
[W0++]
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
;
; Initialize PM Page Boundary SFR
; An example program memory address
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
executed, the user must wait for the programming time
until programming is complete. The two instructions
following the start of the programming sequence
should be NOPs.
© 2006 Microchip Technology Inc.

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