AT89C5131A-PUTUM Atmel, AT89C5131A-PUTUM Datasheet - Page 38

• Manufacturer Part Number: AT89C5131A-PUTUM
• Description: IC 8051 MCU FLASH 32K USB 32QFN
• Manufacturer: Atmel
• Series: AT89C513xr

Specifications of AT89C5131A-PUTUM

• Core Processor: C52X2
• Core Size: 8-Bit
• Speed: 48MHz
• Connectivity: I²C, SPI, UART/USART, USB
• Peripherals: LED, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 1.25K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
• Core: 8051
• Processor Series: AT89x
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 48 MHz
• Data Ram Size: 1.25 KB
• Number Of Programmable I/os: 34
• Number Of Timers: 16 bit
• Operating Supply Voltage: 2.7 V to 5.5 V
• Mounting Style: SMD/SMT
• Height: 0.95 mm
• Interface Type: 2-Wire, EUART, SPI, USB
• Length: 7 mm
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.7 V
• Width: 7 mm
• For Use With: AT89OCD-01 - USB EMULATOR FOR AT8XC51 MCUAT89STK-10 - KIT EVAL APPL MASS STORAGEAT89STK-05 - KIT STARTER FOR AT89C5131
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Details

9. Flash EEPROM Memory
9.1
9.2
9.3
38
General Description
Features
Flash Programming and Erasure
AT89C5130A/31A-M
The Flash memory increases EPROM functionality with in-circuit electrical erasure and program-
ming. It contains 16/32 Kbytes of program memory organized in 128/256 pages of 128 bytes,
respectively. This memory is both parallel and serial In-System Programmable (ISP). ISP allows
devices to alter their own program memory in the actual end product under software control. A
default serial loader (bootloader) program allows ISP of the Flash.
The programming does not require 12V external programming voltage. The necessary high pro-
gramming voltage is generated on-chip using the standard V
The 16/32 Kbytes Flash is programmed by bytes or by pages of 128 bytes. It is not necessary to
erase a byte or a page before programming. The programming of a byte or a page includes a
self erase before programming.
There are three methods of programming the Flash memory:
The bootloader and the Application Programming Interface (API) routines are located in the
Flash Bootloader.
• Flash EEPROM internal program memory.
• Boot vector allows user-provided Flash loader code to reside anywhere in the Flash memory
• Default loader in Boot EEPROM allows programming via the serial port without the need of a
• Up to 64K bytes external program memory if the internal program memory is disabled (EA =
• Programming and erase voltage with standard power supply.
• Read/Program/Erase:
• Byte-wise read (without wait state).
• Byte or page erase and programming (10 ms).
• Typical programming time (32 Kbytes) in 4.5 sec.
• Parallel programming with 87C51 compatible hardware interface to programmer.
• Programmable security for the code in the Flash.
• 100K write cycles for code memory
• 1K write cycles for configuration bits (BLJB, X2, OSCON1, OSCON0)
• 10 years data retention
1. The on-chip ISP bootloader may be invoked which will use low level routines to pro-
2. The Flash may be programmed or erased in the end-user application by calling low-
3. The Flash may be programmed using the parallel method.
space. This configuration provides flexibility to the user.
user provided loader.
0).
gram the pages. The interface used for serial downloading of Flash is the USB.
level routines through a common entry point in the Boot Flash.
CC
pins of the microcontroller.
4337K–USB–04/08