D12321VF20V Renesas Electronics America, D12321VF20V Datasheet - Page 1010

• Manufacturer Part Number: D12321VF20V
• Description: IC H8S/2321 MCU ROMLESS 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12321VF20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 86
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Section 22 Electrical Characteristics
Notes: 1. Follow the program/erase algorithms when making the time settings.
22.3
Although both the F-ZTAT and mask ROM versions fully meet the electrical specifications listed
in this manual, there may be differences in the actual values of the electrical characteristics,
operating margins, noise margins, and so forth, due to differences in the fabrication process, the
on-chip ROM, and the layout patterns.
If the F-ZTAT version is used to carry out system evaluation and testing, therefore, when
switching to the mask ROM version the same evaluation and testing procedures should also be
conducted on this version.
Rev.6.00 Sep. 27, 2007 Page 978 of 1268
REJ09B0220-0600
2. Programming time per 128 bytes. (In the H8S/2329B and H8S/2328B, indicates the
3. Time to erase one block. (In the H8S/2329B and H8S/2328B, indicates the time during
4. Maximum programming time
5. The maximum number of writes (N) should be set as shown below according to the
6. For the maximum erase time (t
7. The minimum number of rewrites after which all characteristics are guaranteed. (The
8. Reference value at 25°C. (This is a general indication of the number of rewrites
9. The data retention characteristics within the specified range, including min. rewrites.
Usage Note
total time during which the P bit is set in flash memory control register 1 (FLMCR1). In
the H8S/2326, indicates the total time during which the P1 bit and P2 bit in flash
memory control registers 1 and 2 (FLMCR1, FLMCR2) are set. Does not include the
program-verify time.)
which the E bit is set in FLMCR1. In the H8S/2326, indicates the total time during which
the E1 bit in FLMCR1 and the E2 bit in FLMCR are set. Does not include the erase-
verify time.)
actual set value of z so as not to exceed the maximum programming time (t
The wait time after P bit setting (z) should be changed as follows according to the
number of writes (n).
Number of writes (n)
wait time after E bit setting (z) and the maximum number of erases (N):
guaranteed range is one to min. rewrites.)
possible under normal conditions.)
t
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
1 ≤ n ≤ 6
t
P
E
(max) = Wait time after E bit setting (z) × maximum number of erases (N)
(max) =
i=1
Σ
N
wait time after P bit setting (z)
z = 30 μs
z = 200 μs
z = 10 μs: For additional writing
E
(max)), the following relationship applies between the
P
(max)).