M30800SFP-BL#U5 Renesas Electronics America, M30800SFP-BL#U5 Datasheet - Page 256

MCU 3/5V 0K,PB-FREE 100-QFP

M30800SFP-BL#U5

Manufacturer Part Number
M30800SFP-BL#U5
Description
MCU 3/5V 0K,PB-FREE 100-QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/80r
Datasheet

Specifications of M30800SFP-BL#U5

Core Processor
M16C/80
Core Size
16-Bit
Speed
20MHz
Connectivity
SIO, UART/USART
Peripherals
DMA, PWM, WDT
Number Of I /o
45
Program Memory Type
ROMless
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M30800SFP-BL#U5M30800SFP-BL#D5
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
M30800SFP-BL#U5
Manufacturer:
Renesas Electronics America
Quantity:
10 000
M
R
R
e
E
1
v
J
6
Figure 28.8 V
1 .
0
C
9
0 .
8 /
B
0
0
0
MAi
CASL
CASH
DB
1
BCLK
RAS
DW
A
Memory expansion Mode and Microprocessor Mode
(When accessing DRAM area with 1 wait)
G
8
u
7
Read Timing
o r
. g
0 -
t
d(BCLK-RAD)
*1:It is a guarantee value with being alone. 35ns.max garantees as follows:
*2:It depends on operation frequency.
u
1
0
p
0
, 2
t
t
t
0
t
t
t
t
t
d(BCLK-RAS)
d(BCLK-CAS)
d(BCLK-CAD)
ac4(RAS-DB)
ac4(CAS-DB)
ac4(CAD-DB)
h(RAS-RAD)
RP
CC
2
0
=(tcyc/2 x 3-20)ns.min
0
=5V timing diagram (7)
5
18ns.max
Page 243
Measuring conditions
t
tcyc
=(tcyc/2-13)ns.min
Row address
h(BCLK-RAD)
=(tcyc/2 x m-35)ns.max (m=3 and 5 when 1 wait and 2 wait, respectively.)
=(tcyc/2 x n-35)ns.max (n=1 and 3 when 1 wait and 2 wait, respectively.)
=(tcyc x l-35)ns.max (l=1 and 2 when 1 wait and 2 wait, respectively.)
• V
• Input timing voltage
• Output timing voltage
t
+ t
+ t
+ t
h(RAS-RAD)*2
CC
su(DB-BCLK)
su(DB-BCLK)
su(DB-BCLK)
t
-3ns.min
=5V±10%
:Determined with V
:Determined with V
d(BCLK-RAS)
18ns.max*1
f o
3
2
9
t
t
ac4(CAD-DB)*2
ac4(RAS-DB)*2
t
t
su(DB-BCLK)
d(BCLK-CAD)
Hi-Z
18ns.max*1
26ns.min*1
t
t
ac4(CAS-DB)*2
String address
d(BCLK-CAS)
IH
OH
=2.5V, V
=2.0V, V
18ns.max*1
t
IL
h(BCLK-CAD)
OL
=0.8V
=0.8V
-3ns.min
t
t
-3ns.min
h(BCLK-RAS)
-3ns.min
h(BCLK-CAS)
t
0ns.min
h(CAS-DB)
28. Electrical characteristics
t
RP*2
Vcc=5V

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