DF2265TE13V Renesas Electronics America, DF2265TE13V Datasheet - Page 687

IC H8S/2265 MCU FLASH 100TQFP

DF2265TE13V

Manufacturer Part Number
DF2265TE13V
Description
IC H8S/2265 MCU FLASH 100TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheets

Specifications of DF2265TE13V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
13MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
LCD, POR, PWM, WDT
Number Of I /o
67
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2265TE13V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Table 25.21 I
Conditions: V
Note: * t
Item
SCL input cycle time
SCL input high pulse width
SCL input low pulse width
SCL, SDA input rise time
SCL, SDA input fall time
SCL, SDA input spike pulse
elimination time
SDA input bus free time
Start condition input hold time
Retransmission start condition
input setup time
Stop condition input setup time t
Data input setup time
Data input hold time
SCL, SDA load capacitance
see section 14.5, Usage Notes.
Sr
can be set to 7.5 t
T
specifications)
2
C Bus Timing
a
CC
= –20°C to +75°C (regular specifications), T
= 2.7 V to 5.5 V, V
cyc
or 17.5 t
Symbol Min.
t
t
t
t
t
t
t
t
t
t
t
C
SCL
SCLH
SCLL
Sr
Sf
SP
BUF
STAH
STAS
STOS
SDAS
SDAH
b
SS
cyc
= 0 V, φ = 5 MHz to maximum operating frequency,
according to the clock used for the I
12 t
3 t
5 t
5 t
3 t
3 t
3 t
0.5 t
0
cyc
cyc
cyc
cyc
cyc
cyc
cyc
cyc
Typ. Max.
Rev. 5.00 Sep. 01, 2009 Page 635 of 656
7.5 t
300
1 t
400
cyc
a
cyc
Section 25 Electrical Characteristics
= –40°C to +85°C (wide-range
* ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
Test
Conditions Remarks
2
C module. For details,
REJ09B0071-0500
Figure 25.11

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