MC908AZ60AVFUE Freescale Semiconductor, MC908AZ60AVFUE Datasheet - Page 374

• Manufacturer Part Number: MC908AZ60AVFUE
• Description: IC MCU 61K FLASH 8.4MHZ 64-QFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908AZ60AVFUE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8.4MHz
• Connectivity: CAN, SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 52
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 15x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 64-QFP
• Processor Series: HC08AZ
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8.4 MHz
• Number Of Programmable I/os: 52
• Number Of Timers: 8
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, M68CBL05CE, ZK-HC08AX-A, M68EM08AS/AZ60AE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 15 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
28.1.11 Timer Module Characteristics
28.1.12 RAM Memory Characteristics
28.1.13 EEPROM Memory Characteristics
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must be erased before it can
374
Input Capture Pulse Width
Input Clock Pulse Width
RAM Data Retention Voltage
EEPROM Programming Time per Byte
EEPROM Erasing Time per Byte
EEPROM Erasing Time per Block
EEPROM Erasing Time per Bulk
EEPROM Programming Voltage Discharge Period
Number of Programming Operations to the Same EEPROM Byte
Before Erase
EEPROM Write/Erase Cycles @ 10 ms Write Time
EEPROM Data Retention After 10,000 Write/Erase Cycles
EEPROM Programming Maximum Time to ‘AUTO’ Bit Set
EEPROM Erasing Maximum Time to ‘AUTO’ Bit Set
be programmed again.
(1)
MC68HC908AZ60A • MC68HC908AS60A • MC68HC908AS60E Data Sheet, Rev. 6
Characteristic
Characteristic
Characteristic
t
Symbol
TCH,
Symbol
t
t
TIH,
Symbol
t
EEBLOCK
t
V
t
EEBYTE
EEBULK
t
EEPGM
EEFPV
RDR
—
—
—
—
—
t
t
TIL
TCL
(1/f
Min
125
OP
Min
0.7
10,000
Min
100
) + 5
10
10
10
10
10
—
—
—
Freescale Semiconductor
Max
Max
Max
500
—
—
—
—
—
—
—
—
—
—
8
8
Cycles
Years
Unit
Unit
Unit
ms
ms
ms
ms
ms
μs
—
μs
ns
ns
V