FMG1G100US60H Fairchild Semiconductor, FMG1G100US60H Datasheet - Page 49

• Manufacturer Part Number: FMG1G100US60H
• Description: IGBT MOLDING 600V 100A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG1G100US60H

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.84nF @ 30V
• Power - Max: 400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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TO-220 (Continued)
FQP6N80C
FQP5N80
FQP4N80
FQP3N80C
SSP3N80A
FQP3N80
FQP2N80
FQP9N90C
FQP8N90C
FQP6N90C
FQP4N90
FQP4N90C
FQP3N90
FQP2NA90
FQP2N90
FQP3P50
FQP1P50
FQP4P40
FQP2P40
FQP9P25
SFP9644
FQP6P25
SFP9634
FQP4P25
FQP2P25
SFP9614
SFP9640L
FQP12P20
SFP9640
FQP7P20
SFP9630
FQP5P20
SFP9620
FQP3P20
SFP9610
FQP15P12
FQP22P10
FQP17P10
SFP9540
TO-220 P-Channel
Products
Min. (V)
BV
-500
-500
-400
-400
-250
-250
-250
-250
-250
-250
-250
-200
-200
-200
-200
-200
-200
-200
-200
-200
-120
-100
-100
-100
800
800
800
800
800
800
800
900
900
900
900
900
900
900
900
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.125
10V
4.25
10.5
0.62
0.47
0.69
0.19
2.5
2.6
3.6
4.8
6.3
1.4
1.9
2.3
3.1
4.2
5.8
7.2
4.9
3.1
6.5
0.8
1.1
1.3
2.1
0.5
0.8
1.4
1.5
2.7
0.2
0.2
–
5
4
4
3
R
0.5@5V
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-44
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Replaced by FQP3N80
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.5
21
25
19
13
15
12
45
35
30
24
17
20
15
12
18
11
18
10
29
45
21
29
10
46
31
46
19
29
10
15
29
40
30
43
9
6
9
= 5V
I
D
11.5
16.5
5.5
4.8
3.9
2.4
4.2
3.6
2.8
2.2
2.7
1.5
3.5
9.4
8.6
2.3
1.6
7.3
6.5
4.8
3.5
2.8
1.8
11
11
15
22
17
3
3
8
6
6
4
2
6
5
4
(A)
MOSFETs
P
D
158
140
130
107
107
205
170
167
140
140
130
107
120
123
120
123
100
125
100
132
85
85
85
63
85
63
90
70
75
52
20
98
90
70
75
38
52
20
(W)