FMG1G100US60H Fairchild Semiconductor, FMG1G100US60H Datasheet - Page 92

• Manufacturer Part Number: FMG1G100US60H
• Description: IGBT MOLDING 600V 100A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG1G100US60H

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.84nF @ 30V
• Power - Max: 400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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Bipolar Power Transistors – General Purpose Transistors (Continued)
KSD2058
KSD2012
KSD1944
KSD1273
KSD1408
KSD1362
KKSD1588
TO-220F PNP Configuration
KSA1304
KSA1614
KSB1015
KSB1366
KSB1017
KSB1097
TO-251(IPAK) NPN Configuration
KSH29
KSH29C
MJD29C
KSC3076
KSC3073
KSD1221
MJD31C
KSC3074
KSH3055I
TO-251(IPAK) PNP Configuration
KSA1241
KSA1243
KSB906
KSA1242
KSA1244
KSH2955
TO-252(DPAK) NPN Configuration
KSH340
MJD340
KSH29C
Products
I
C
1.5
0.5
0.5
10
10
3
3
3
3
4
5
7
3
3
3
4
7
1
1
1
2
3
3
3
5
2
3
3
5
5
1
(A) V
CEO
150
100
100
100
300
300
100
60
60
60
60
80
70
60
55
60
60
80
60
40
50
30
60
50
60
50
30
60
20
50
60
(V) V
CBO
150
100
150
100
100
100
300
300
100
60
60
80
80
80
80
60
60
80
80
40
50
30
60
60
70
55
30
60
35
60
70
(V) V
EBO
7
7
8
6
5
8
7
5
5
7
7
5
7
5
5
5
5
5
7
5
5
5
5
5
7
8
5
5
3
3
5
(V) P
C
25
25
30
40
25
20
30
20
20
25
25
25
30
15
15
15
10
10
20
15
20
20
10
10
20
10
20
20
15
15
15
(W)
Min
100
400
500
100
100
60
40
20
40
40
40
60
40
40
15
15
15
70
70
60
10
70
20
70
70
60
70
20
30
30
15
2-87
Discrete Power Products –
Max
2000
2500
300
320
240
140
200
140
240
200
320
240
200
240
240
300
240
100
240
240
200
320
240
100
240
240
75
75
75
50
75
h
@I
FE
0.05
0.05
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
C
5
3
3
1
1
1
3
1
4
1
4
1
(A) @V
10
10
10
CE
5
5
4
4
5
5
1
5
5
5
5
1
4
4
4
2
2
5
4
1
4
2
2
5
2
1
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.45
0.15
0.34
0.35
0.4
0.5
0.5
0.3
0.4
0.3
–
–
–
–
–
–
1
–
–
–
–
–
–
–
–
–
1
–
–
–
–
1.5
1.5
0.5
1.5
1.7
0.7
0.5
0.5
0.8
1.1
0.7
0.5
0.5
0.7
0.7
0.8
1.2
1.1
0.5
1.7
0.5
1
1
1
1
1
1
1
1
1
1
V
CE (sat)
0.5
0.3
0.1
C
2
2
2
2
3
5
5
1
3
2
3
5
1
1
1
1
2
3
3
3
4
1
2
3
4
3
4
1
(A) @I
0.125
0.125
0.125
0.375
0.125
0.05
0.05
0.05
0.05
0.15
0.05
0.15
0.06
0.01
0.2
0.2
0.3
0.5
0.5
0.1
0.3
0.2
0.3
0.5
0.2
0.3
0.4
0.2
0.3
0.1
0.4
B
(A)