MOSFET N-CH 200V 110A ISOTOP

STE110NS20FD

Manufacturer Part NumberSTE110NS20FD
DescriptionMOSFET N-CH 200V 110A ISOTOP
ManufacturerSTMicroelectronics
SeriesMESH OVERLAY™
STE110NS20FD datasheet
 


Specifications of STE110NS20FD

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs24 mOhm @ 50A, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C110AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs504nC @ 10VInput Capacitance (ciss) @ Vds7900pF @ 25V
Power - Max500WMounting TypeChassis Mount
Package / CaseISOTOPLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-2657-5  
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General features
Type
V
DSS
STE110NS20FD
200V
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
± 20V gate to source voltage rating
Low intrinsic capacitance
Fast body-drain diode:low trr, Qrr
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performances. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(ON)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Applications
Switching application
Order codes
Part number
STE110NS20FD
May 2006
N-channel 200V - 0.022Ω - 110A - ISOTOP
MESH OVERLAY™ Power MOSFET
R
I
DS(on)
D
<0.024Ω
110A
Internal schematic diagram
Marking
Package
E110NS20FD
Rev 3
STE110NS20FD
ISOTOP
Packaging
ISOTOP
Tube
1/12
www.st.com
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STE110NS20FD Summary of contents

  • Page 1

    ... Applications ■ Switching application Order codes Part number STE110NS20FD May 2006 N-channel 200V - 0.022Ω - 110A - ISOTOP MESH OVERLAY™ Power MOSFET R I DS(on) D <0.024Ω 110A Internal schematic diagram Marking Package E110NS20FD Rev 3 STE110NS20FD ISOTOP Packaging ISOTOP Tube 1/12 www.st.com 12 ...

  • Page 2

    ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STE110NS20FD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

  • Page 3

    ... STE110NS20FD 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuos Drain current (continuos (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope V Insulation winthstand voltage (AC-RMS) ...

  • Page 4

    ... 10V Parameter Test condictions V > D(on 50A D V =25V, f=1 MHz 100V 10V GS (see Figure 13) STE110NS20FD Min. Typ. Max 200 GS 100 ±100 = 250µ 50A 0.022 0.024 Min. Typ. Max. , DS(on)max 30 7900 =0 1500 GS 460 = 100A, 360 504 D 35 135 ...

  • Page 5

    ... STE110NS20FD Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Off-voltage rise time r(Voff) t Fall time f Cross-over time t c Table 7. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge ...

  • Page 6

    ... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STE110NS20FD ...

  • Page 7

    ... STE110NS20FD Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...

  • Page 8

    ... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped inductive load test circuit Figure 17. Switching time waveform STE110NS20FD ...

  • Page 9

    ... STE110NS20FD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

  • Page 10

    ... STE110NS20FD inch MIN. TYP. MAX. 0.466 0.480 0.350 0.358 0.076 0.080 0.029 0.033 0.496 0.503 0.990 1.003 1.240 1.248 0.157 0.161 0.169 0.586 0.594 1.185 1 ...

  • Page 11

    ... STE110NS20FD 5 Revision history Table 8. Revision history Date 12-May-2006 Revision 3 New template Revision history Changes 11/12 ...

  • Page 12

    ... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STE110NS20FD ...