STE110NS20FD STMicroelectronics, STE110NS20FD Datasheet - Page 4

• Manufacturer Part Number: STE110NS20FD
• Description: MOSFET N-CH 200V 110A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STE110NS20FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 504nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2657-5

Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
C
DS(on)
C
Q
GS(th)
Q
DSS
GSS
fs
Q
oss
iss
rss
gs
gd
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
I
V
V
V
V
V
V
I
V
V
V
(see Figure 13)
D
D
GS
GS
DS
DS
DS
DS
DS
DD
GS
= 250µA, V
= 50A
=25V, f=1 MHz, V
= Max rating
= Max rating, @125°C
= ± 20V
= V
= 10V, I
> I
Test condictions
Test condictions
= 100V, I
= 10V
D(on)
GS
, I
D
x R
D
D
GS
= 50A
= 250µA
= 100A,
DS(on)max
= 0
GS
=0
,
Min.
Min.
200
2
0.022 0.024
7900
1500
Typ.
Typ.
460
360
135
30
35
3
STE110NS20FD
±100
Max.
Max.
100
504
10
4
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
Ω
S