STE110NS20FD STMicroelectronics, STE110NS20FD Datasheet - Page 5

• Manufacturer Part Number: STE110NS20FD
• Description: MOSFET N-CH 200V 110A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STE110NS20FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 504nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2657-5

STE110NS20FD
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
t
V
t
SDM
r(Voff)
I
d(on)
RRM
I
SD
Q
t
t
t
SD
t
c
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 12)
V
R
(see Figure 12)
I
I
di/dt = 100A/µs,
V
SD
SD
DD
DD
DD
G
G
=100A, Tj=150°C
= 4.7Ω V
= 4.7Ω , V
= 100A, V
=160V,
Test condictions
= 100V, I
= 100V, I
Test condictions
(see Figure 17)
GS
GS
D
D
GS
= 50A
= 10V
= 100A,
= 10V
= 0
Electrical characteristics
Min.
Min
Typ.
Typ.
1.35
130
245
140
220
225
40
12
Max. Unit
Max Unit
110
440
1.6
ns
ns
ns
ns
ns
µC
ns
5/12
A
A
V
A