STE110NS20FD STMicroelectronics, STE110NS20FD Datasheet - Page 3

• Manufacturer Part Number: STE110NS20FD
• Description: MOSFET N-CH 200V 110A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STE110NS20FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 504nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2657-5

STE110NS20FD
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2. I
Table 2.
Table 3.
Symbol
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
dv/dt
Symbol
Symbol
I
V
DM
P
V
V
V
T
E
DGR
I
I
I
TOT
SD
T
ISO
GS
AR
DS
stg
D
D
T
AS
j
(1)
l
(2)
<110A, di/dt < 200A/µs, V
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuos) at T
Drain current (continuos) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation winthstand voltage (AC-RMS)
Storage temperature
Max. operating junction temperature
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
Thermal resistance
Avalanche data
j
= 25 °C, I
Parameter
DD
Parameter
Parameter
C
GS
D
= 80% V
= 25°C
= I
GS
= 20 kΩ)
j
max)
AR
= 0)
, V
C
C
(BR)DSS
DD
= 25°C
= 100°C
= 50V)
–65 to 150
Value
Value
Value
2500
200
±20
110
440
500
150
0.25
200
300
110
750
69
25
30
4
Electrical ratings
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
°C
°C
mJ
°C
W
V
V
V
A
A
A
V
A
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