FSB50250US Fairchild Semiconductor, FSB50250US Datasheet

FSB50250US
Manufacturer Part Number	FSB50250US
Description	MODULE SPM 500V 1.1A SPM23-BD
Manufacturer	Fairchild Semiconductor
Series	SPM®
Type	FET
FSB50250US datasheets	1. FSB50250US.pdf (8 pages)

Request lead time and price

Availability: In stock

International delivery:

Warranty: 60 days

Shipping & payment terms

Specifications of FSB50250US
Configuration	3 Phase	Current	1.1A
Voltage	500V	Voltage - Isolation	1500Vrms
Package / Case	SPM23BD	Mounting Style	SMD/SMT
Maximum Operating Temperature	+ 150 C	Minimum Operating Temperature	- 40 C
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Other names	FSB50250USTR

Page 1/8

Download datasheet (299Kb)Embed

Prev Next

FSB50250US

Smart Power Module (SPM

Features

• 500V R

=4.2Ω(max) 3-phase FRFET inverter including

DS(on)

high voltage integrated circuit (HVIC)

• 3 divided negative dc-link terminals for inverter current sens-

ing applications

• HVIC for gate driving and undervoltage protection

• 3/5V CMOS/TTL compatible, active-high interface

• Optimized for low electromagnetic interference

• Isolation voltage rating of 1500Vrms for 1min.

• Surface mounted device package

• Moisture Sensitive Level (MSL) 3

Absolute Maximum Ratings

Symbol

Parameter

DC Link Input Voltage,

Drain-source Voltage of each FRFET

Each FRFET Drain Current, Continuous

D25

Each FRFET Drain Current, Continuous

D80

Each FRFET Drain Current, Peak

Maximum Power Dissipation

Control Supply Voltage

High-side Bias Voltage

Input Signal Voltage

Operating Junction Temperature

Storage Temperature

STG

Junction to Case Thermal Resistance

θJC

Isolation Voltage

ISO

FSB50250US Rev. A

)

General Description

FSB50250US is a tiny smart power module (SPM

FRFET technology as a compact inverter solution for small

power motor drive applications such as fan motors and water

suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),

and 3 half-bridge HVICs for FRFET gate driving. FSB50250US

provides low electromagnetic interference (EMI) characteristics

with optimized switching speed. Moreover, since it employs

FRFET as a power switch, it has much better ruggedness and

larger safe operation area (SOA) than that of an IGBT-based

power module or one-chip solution. The package is optimized

for the thermal performance and compactness for the use in the

built-in motor application and any other application where the

assembly space is concerned. FSB50250US is the most

solution for the compact inverter providing the energy efficiency,

compactness, and low electromagnetic interference.

Conditions

= 25°C

= 80°C

= 25°C, PW < 100μs

= 25°C, Each FRFET

Applied between V

and COM

Applied between V

-U, V

B(U)

Applied between IN and COM

Each FRFET under inverter operating con-

dition (Note 1)

60Hz, Sinusoidal, 1 minute, Connection

pins to heatsink

February 2009

) based on

Rating

Units

500

1.1

0.8

2.8

-V, V

-W

B(V)

B(W)

-0.3 ~ VCC+0.3

-40 ~ 150

°C

-50 ~ 150

°C

°C/W

9.3

1500

www.fairchildsemi.com

rms

Download datasheet (299Kb)

Related parts for FSB50250US
Part Number	Description	Manufacturer	Datasheet
FSB50250S	IC SMART POWER MOD 2A SPM23-BA	Fairchild Semiconductor	FSB50325S_PRODUCT_CHANGE.pdf (2 pages)
FSB50250	IC SMART POWER MOD 2A SPM23-AA	Fairchild Semiconductor	FSB50325S_PRODUCT_CHANGE.pdf (2 pages)
FSB50250UTD	MOD SPM 500V 0.5A SPM23-HD	Fairchild Semiconductor	FSB50250UTD.pdf (9 pages)
FSB50250UD	MOD SPM 500V 0.5A SPM23-HD	Fairchild Semiconductor	FSB50250UD.pdf (9 pages)
FSB50250S_07	Smart Power Module (spm	Fairchild Semiconductor
FSB50450TB		Fairchild Semiconductor	FSB50450TB.pdf (17 pages)
FSB560A	TRANSISTOR NPN BIPOLAR SSOT-3	Fairchild Semiconductor	MMBFJ108_PRODUCT_CHANGE.pdf (8 pages)
FSB560	TRANSISTOR NPN BIPOLAR SSOT-3	Fairchild Semiconductor	MMBFJ108_PRODUCT_CHANGE.pdf (8 pages)
FSB50450S	IC SMART POWER MOD 3A SPM23-BA	Fairchild Semiconductor	FSB50325S_PRODUCT_CHANGE.pdf (2 pages)
FSB52006S	MODULE SPM SMART PWR SPM23-BA	Fairchild Semiconductor	FSB52006S.pdf (8 pages)
FSB117H		Fairchild Semiconductor	FSB117H.pdf (18 pages)
FSB147H		Fairchild Semiconductor	FSB147H.pdf (18 pages)
FSB127H		Fairchild Semiconductor	FSB117H.pdf (18 pages)
FSBH0F70A_F116	The highly integrated FSBH-series consists of an integrated current-mode Pulse Width Modulator (PWM) and an avalanche-rugged 700V SenseFET	Fairchild Semiconductor	FSBH0F70A_F116.pdf (16 pages)
FSBH0170NY_F116	The highly integrated FSBH-series consists of an integrated current-mode Pulse Width Modulator (PWM) and an avalanche-rugged 700V SenseFET	Fairchild Semiconductor	FSBH0F70A_F116.pdf (16 pages)

FSB50250US Summary of contents
Page 1 ... FRFET technology as a compact inverter solution for small power motor drive applications such as fan motors and water suppliers composed of 6 fast-recovery MOSFET (FRFET), and 3 half-bridge HVICs for FRFET gate driving. FSB50250US provides low electromagnetic interference (EMI) characteristics with optimized switching speed. Moreover, since it employs ... Page 2 ... Note: Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM ure 2 and 5. Figure 1. Pin Configuration and Internal Block Diagram (Bottom View) FSB50250US Rev. A Pin Description IC Common Supply Ground Bias Voltage for U Phase High Side FRFET Driving ... Page 3 ... The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir- cuit that is same as the switching test circuit. Package Marking & Ordering Information Device Marking Device FSB50250US FSB50250US FSB50250US Rev 25° =15V Unless Otherwise Specified ... Page 4 ... Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters 3.80mm 3.80mm Note: Attach the thermocouple on top of the heatsink-side of SPM FSB50250US Rev. A Conditions Applied between P and N Applied between V and COM CC Applied between V and output( ... Page 5 ... V IN 100 (a) Turn- Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side) Input Signal UV Protection Status Low-side Supply, V MOSFET Current Input Signal UV Protection Status High-side Supply, V MOSFET Current FSB50250US Rev 120 Figure 4. Switching Time Definition R EH VCC VB HIN HO LIN VS COM LO C One-leg Diagram of SPM ... Page 6 ... 15-V Supply FSB50250US Rev (1) COM (2) V B(U) (3) V CC(U) VCC VB (4) IN (UH) HIN HO (5) IN (UL) LIN VS C COM LO 1 (6) V S(U) (7) V B(V) (8) V CC(V) VCC VB (9) IN (VH) HIN HO (10) IN (VL) LIN VS C COM LO 1 (11) V S(V) (12) V B(W) (13) V CC(W) ... Page 7 ... Detailed Package Outline Drawings (1.165) 15*1.778=26.67 13.34 ±0.30 #1 #17 12.23 ±0.30 2x3.90=7.80 (2.275) 0.60 ±0.10 Max 1.00 GAGE PLANE SEATING PLANE FSB50250US Rev. A Max 1.00 0.60 ±0.10 ±0.30 13.34 ±0.30 #1 #16 1.30 #23 13.13 ±0.30 7.80 29.00 ±0.20 LAND PATTERN RECOMMENDATIONS ±0.30 4x3.90=15.60 ± ... Page 8 ... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FSB50250US Rev. A GlobalOptoisolator™ Power247 GTO™ PowerEdge™ HiSeC™ PowerSaver™ i-Lo™ PowerTrench ImpliedDisconnect™ Programmable Active Droop™ ...

FSB50250US Summary of contents

Page 1
... FRFET technology as a compact inverter solution for small power motor drive applications such as fan motors and water suppliers composed of 6 fast-recovery MOSFET (FRFET), and 3 half-bridge HVICs for FRFET gate driving. FSB50250US provides low electromagnetic interference (EMI) characteristics with optimized switching speed. Moreover, since it employs ...
Page 2
... Note: Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM ure 2 and 5. Figure 1. Pin Configuration and Internal Block Diagram (Bottom View) FSB50250US Rev. A Pin Description IC Common Supply Ground Bias Voltage for U Phase High Side FRFET Driving ...
Page 3
... The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir- cuit that is same as the switching test circuit. Package Marking & Ordering Information Device Marking Device FSB50250US FSB50250US FSB50250US Rev 25° =15V Unless Otherwise Specified ...
Page 4
... Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters 3.80mm 3.80mm Note: Attach the thermocouple on top of the heatsink-side of SPM FSB50250US Rev. A Conditions Applied between P and N Applied between V and COM CC Applied between V and output( ...
Page 5
... V IN 100 (a) Turn- Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side) Input Signal UV Protection Status Low-side Supply, V MOSFET Current Input Signal UV Protection Status High-side Supply, V MOSFET Current FSB50250US Rev 120 Figure 4. Switching Time Definition R EH VCC VB HIN HO LIN VS COM LO C One-leg Diagram of SPM ...
Page 6
... 15-V Supply FSB50250US Rev (1) COM (2) V B(U) (3) V CC(U) VCC VB (4) IN (UH) HIN HO (5) IN (UL) LIN VS C COM LO 1 (6) V S(U) (7) V B(V) (8) V CC(V) VCC VB (9) IN (VH) HIN HO (10) IN (VL) LIN VS C COM LO 1 (11) V S(V) (12) V B(W) (13) V CC(W) ...
Page 7
... Detailed Package Outline Drawings (1.165) 15*1.778=26.67 13.34 ±0.30 #1 #17 12.23 ±0.30 2x3.90=7.80 (2.275) 0.60 ±0.10 Max 1.00 GAGE PLANE SEATING PLANE FSB50250US Rev. A Max 1.00 0.60 ±0.10 ±0.30 13.34 ±0.30 #1 #16 1.30 #23 13.13 ±0.30 7.80 29.00 ±0.20 LAND PATTERN RECOMMENDATIONS ±0.30 4x3.90=15.60 ± ...
Page 8
... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FSB50250US Rev. A GlobalOptoisolator™ Power247 GTO™ PowerEdge™ HiSeC™ PowerSaver™ i-Lo™ PowerTrench ImpliedDisconnect™ Programmable Active Droop™ ...

FSB50250US

FSB50250US

Shipping terms

Payment terms

Specifications of FSB50250US

Related parts for FSB50250US

FSB50250US Summary of contents

Related keywords: