FQD12P10TM_F085 Fairchild Semiconductor, FQD12P10TM_F085 Datasheet

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FQD12P10TM_F085

Manufacturer Part Number
FQD12P10TM_F085
Description
MOSFET P-CH 100V 9.4A DPAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FQD12P10TM_F085

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
290 mOhm @ 4.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
9.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FQD12P10TM_F085 Rev. A
FQD12P10TM_F085
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8! from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
1
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -9.4A, -100V, R
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Qualified to AEC Q101
• RoHS Compliant
Typ
--
--
--
DS(on)
-55 to +150
Ratings
= 0.29
-37.6
-100
-9.4
-6.0
370
-9.4
-6.0
300
5.0
2.5
0.4
50
30
G
@V
Max
110
2.5
50
GS
February 2010
D
S
= -10 V
www.fairchildsemi.com
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
tm

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FQD12P10TM_F085 Summary of contents

Page 1

... JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2010 Fairchild Semiconductor Corporation FQD12P10TM_F085 Rev. A Features • -9.4A, -100V, R • Low gate charge ( typical 21 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 6.3mH -9.4A -25V " -11.5A, di/dt " 300A " DSS, 4. Pulse Test : Pulse width " 300 s, Duty cycle " Essentially independent of operating temperature FQD12P10TM_F085 Rev 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -100 ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1600 1400 C oss C 1200 iss 1000 800 C rss 600 400 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics FQD12P10TM_F085 Rev 25 Figure 2. Transfer Characteristics = - 10V " Note : 0.0 Figure 4. Body Diode Forward Voltage ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area FQD12P10TM_F085 Rev. A (Continued) 3.0 2.5 2.0 1.5 1.0 " Notes : 0.5 = -250 # 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 10 8 100 Figure 10. Maximum Drain Current " ...

Page 5

... -3mA -3mA Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V FQD12P10TM_F085 Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FQD12P10TM_F085 Rev DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Package Dimensions 6.60 0.20 5.34 0.30 (0.50) (4.34) MAX0.96 2.30TYP [2.30 0.20] FQD12P10TM_F085 Rev. A D-PAK (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (5.34) (5.04) (1.50) (2XR0.25) 7 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 0.76 0.10 Dimensions in Millimeters ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQD12P10TM_F085 Rev. A ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ® Green FPS™ e-Series™ ...

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