FQD12P10TM_F085 Fairchild Semiconductor, FQD12P10TM_F085 Datasheet - Page 4

• Manufacturer Part Number: FQD12P10TM_F085
• Description: MOSFET P-CH 100V 9.4A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of FQD12P10TM_F085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQD12P10TM_F085 Rev. A
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
" Notes :
1 0
1 0
1. T
2. T
3. Single Pulse
- 1
C
J
0
1 0
= 150
= 25
10
- 5
1
o
D = 0 . 5
0 . 0 2
0 . 0 1
C
o
0 . 0 5
DS(on)
C
50
DC
0 . 2
0 . 1
10 ms
Figure 11. Transient Thermal Response Curve
100
1 ms
(Continued)
1 0
o
C]
- 4
s in g le p u ls e
" Notes :
100 s
1. V
2. I
t
D
GS
1
= -250 # A
150
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
= 0 V
10
2
1 0
- 3
200
4
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
-100
8
6
4
2
0
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
" N o te s :
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
P
- 1
-50
DM
$ J C
J M
50
- T
(t) = 2 .5 ! /W M a x .
vs. Case Temperature
C
T
= P
vs. Temperature
J
T
t
, Junction Temperature [
1
C
D M
0
t
, Case Temperature [ ! ]
2
1 0
* Z
75
0
1
$ J C
/t
2
(t)
50
100
1 0
100
1
o
C]
" Notes :
125
www.fairchildsemi.com
1. V
2. I
150
D
GS
= -4.7 A
= -10 V
200
150