FDPF8N60ZUT

Manufacturer Part NumberFDPF8N60ZUT
DescriptionMOSFET N-CH 600V TO-220F-3
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF8N60ZUT datasheet
 


Specifications of FDPF8N60ZUT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.35 Ohm @ 3.25A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C6.5AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs26nC @ 10VInput Capacitance (ciss) @ Vds1265pF @ 25V
Power - Max34.5WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Formed LeadsLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP8N60ZU / FDPF8N60ZUT
N-Channel MOSFET, FRFET
600V, 6.5A, 1.35Ω
Features
• R
= 1.15mΩ ( Typ.) @ V
DS(on)
GS
• Low gate charge ( Typ. 20nC)
• Low C
( Typ. 10pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
TO-220
G
D
S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Sink Typ.
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2009 Fairchild Semiconductor Corporation
FDP8N60ZU / FDPF8N60ZUT Rev. A
Description
= 10V, I
= 3.25A
These N-Channel enhancement mode power field effect
D
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
D
G
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
April 2009
UniFET
D
D
G
G
S
S
FDP8N60ZU
FDPF8N60ZUT
600
±30
6.5
6.5*
3.9
3.9*
(Note 1)
26
26*
(Note 2)
420
(Note 1)
6.5
(Note 1)
13.5
(Note 3)
20
135
34.5
1.05
0.28
-55 to +150
300
FDP8N60ZU
FDPF8N60ZUT
0.95
3.6
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
switching
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF8N60ZUT Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FDP8N60ZU / FDPF8N60ZUT Rev. A Description = 10V 3.25A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Repetitive Rating: Pulse width limited by maximum junction temperature 20mH 6.5A 50V 25Ω, Starting ≤ 6.5A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4: Essentially Independent of Operating Temperature Typical Characteristics FDP8N60ZU / FDPF8N60ZUT Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250μ 0V, T ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = shorted) C oss = rss = 1500 oss C iss 1000 500 C rss 0 0 Drain-Source Voltage [V] DS FDP8N60ZU / FDPF8N60ZUT Rev. A Figure 2. Transfer Characteristics *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 200 100 10 = 20V GS o *Note: T ...

  • Page 4

    ... T , Junction Temperature [ J Figure 9. Maximum Drain Current vs. Case Temperature 8 6 Limited by package Case Temperature C Figure 10. Transient Thermal Response Curve - FDPF8N60ZUT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 0.005 -5 10 FDP8N60ZU / FDPF8N60ZUT Rev. A (Continued) Figure 8. Maximum Safe Operating Area ...

  • Page 5

    ... FDP8N60ZU / FDPF8N60ZUT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP8N60ZU / FDPF8N60ZUT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions 9.90 ø3.60 1.27 ±0.10 2.54TYP [2.54 ] ±0.20 FDP8N60ZU / FDPF8N60ZUT Rev. A TO-220 ±0.20 (8.70) ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ] ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP8N60ZU / FDPF8N60ZUT Rev. A TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 ±0.20 8 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP8N60ZU / FDPF8N60ZUT Rev. A F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...