SUD50P04-15-E3 Vishay, SUD50P04-15-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD50P04-15-E3
• Description: MOSFET Power 40V 50A 100W
• Manufacturer: Vishay

Specifications of SUD50P04-15-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 23mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
a.
b.
c.
www.vishay.com FaxBack 408-970-5600
SUD50P04-15
Vishay Siliconix
2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
O S
Parameter
c
c
c
c
c
a
a
R
i
a
300 s, duty cycle
a
a
Symbol
V
V
r
(BR)DSS
I
DS(on)
t
t
I
I
I
C
GS(th)
D(on)
C
C
Q
V
Q
d(on)
d(off)
I
2%.
GSS
DSS
DSS
g
Q
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
C
I
I
New Product
V
V
D
V
V
V
DS
= 25 C)
GS
DS
GS
= –20 V, V
–50 A, V
= –40 V, V
= –10 V, I
= 0 V, V
I
V
F
V
50 A V
V
V
V
V
V
V
V
V
DS
GS
20 V V
= –50 A, di/dt = 100 A/ s
DS
DS
DD
DD
I
GS
GS
DS
DS
Test Condition
F
= –50 A, V
= –4.5 V, I
= V
= 0 V, V
= –5 V, V
= –20 V, R
= 0 V, I
= –40 V, V
= –10 V, I
= –15 V, I
DS
GEN
GS
20 V R
D
GS
GS
= –25 V, f = 1 MHz
= –30 A, T
, I
= –10 V, R
D
= –10 V, I
,
D
GS
= 0 V, T
= –250 A
GS
= –250 A
D
D
D
GS
10 V R
10 V I
L
L
GS
=
= –30 A
= –30 A
= –20 A
= 0.4
= –10 V
= 0 V
= 0 V
0 4
20 V
J
J
D
G
= 125 C
= 125 C
= –50 A
= 2.5
2 5
50 A
Min
–120
–1.0
–40
20
0.012
0.018
Typ
5400
–1.2
640
300
380
140
85
25
15
15
75
40
S-00830—Rev. A, 24-Apr-00
Document Number: 71176
Max
0.015
0.024
0.023
–150
–1.5
–50
130
580
210
115
–1
25
80
100
Unit
nC
nA
pF
ns
ns
ns
V
V
A
S
A
V
C
A
A
F