SUD50P04-15-E3 Vishay, SUD50P04-15-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50P04-15-E3
• Description: MOSFET Power 40V 50A 100W
• Manufacturer: Vishay

Specifications of SUD50P04-15-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 23mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

www.vishay.com FaxBack 408-970-5600
SUD50P04-15
Vishay Siliconix
4
0.01
0.1
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
2
1
0
0
–50
0
10
–4
On-Resistance vs. Junction Temperature
Duty Cycle = 0.5
0.2
0.1
V
I
–25
Single Pulse
D
GS
= 30 A
25
= 10 V
Maximum Drain Current vs.
T
0
J
T
0.05
50
C
– Junction Temperature ( C)
Case Temperature
– Case Temperature ( C)
25
0.02
75
50
10
–3
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
150
150
10
–2
Square Wave Pulse Duration (sec)
175
175
New Product
10
–1
500
100
100
0.1
10
10
1
1
0.1
0
by r
Source-Drain Diode Forward Voltage
Limited
T
DS(on)
J
V
0.3
V
= 150 C
SD
DS
Single Pulse
– Source-to-Drain Voltage (V)
T
– Drain-to-Source Voltage (V)
Safe Operating Area
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
C
P
1
DM
1
= 25 C
JM
0.6
– T
t
1
A
= P
t
2
DM
Z
thJA
0.9
thJA
t
t
1
2
T
(t)
10
S-00830—Rev. A, 24-Apr-00
J
= 40 C/W
Document Number: 71176
= 25 C
10
1.2
10 s
100 s
1 ms
10 ms
100 ms
dc
100
30
1.5