SUD50P04-15-E3 Vishay, SUD50P04-15-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50P04-15-E3
• Description: MOSFET Power 40V 50A 100W
• Manufacturer: Vishay

Specifications of SUD50P04-15-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 23mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 71176
S-00830—Rev. A, 24-Apr-00
8000
6000
4000
2000
250
200
150
100
V
50
80
60
40
20
GS
0
0
0
0
0
0
= 10, 9, 8 V
5
20
V
V
2
DS
DS
T
C
C
oss
Output Characteristics
= –55 C
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
Transconductance
I
D
10
– Drain Current (A)
Capacitance
40
4
7 V
15
60
6
C
20
rss
80
C
8
125 C
iss
25
2, 3 V
25 C
6 V
5 V
4 V
100
10
30
New Product
0.04
0.03
0.02
0.01
100
80
60
40
20
20
16
12
0
0
8
4
0
0
0
0
V
I
D
DS
= 50 A
On-Resistance vs. Drain Current
20
1
= 20 V
V
V
GS
GS
40
Q
Transfer Characteristics
g
= 4.5 V
– Gate-to-Source Voltage (V)
I
– Total Gate Charge (nC)
www.vishay.com FaxBack 408-970-5600
D
40
2
– Drain Current (A)
Gate Charge
Vishay Siliconix
SUD50P04-15
60
80
3
T
C
= –55 C
25 C
V
GS
80
4
= 10 V
120
100
5
125 C
120
160
6
3