FDPF7N60NZ Fairchild Semiconductor, FDPF7N60NZ Datasheet - Page 5

• Manufacturer Part Number: FDPF7N60NZ
• Description: MOSFET N-CH 600V 6.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF7N60NZ

• Input Capacitance (ciss) @ Vds: 730pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.25 Ohm @ 3.25A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Transistor Polarity: PNP, N-Channel
• Mounting Style: Through Hole
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP7N60NZ / FDPF7N60NZ Rev. A
0.001
0.01
0.01
0.1
0.1
1
5
1
10
5
10
0.01
0.02
0.05
-5
0.5
0.2
0.1
-5
Single pulse
0.1
0.05
0.2
0.02
0.5
0.01
Figure 12. Transient Thermal Response Curve
Single pulse
Figure 13. Transient Thermal Response Curve
10
10
-4
-4
10
10
-3
-3
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
-FDPF7N60NZ
-FDP7N60NZ
10
10
-2
-2
5
10
10
-1
-1
10
1
0
* Notes :
* Notes :
1. Z
2. Duty Factor, D=t
3. T
1. Z
2. Duty Factor, D=t
3. T

JM

JM
JC
JC
10
10
- T
P
(t) = 0.85
- T
(t) = 3.8
P
DM
1
DM
C
C
= P
= P
DM
o
DM
o
C/W Max.
t
1
C/W Max.
t
10
10
1
t
* Z
* Z
2
t
2
1
1
2
2
/t
/t


2
JC
2
JC
(t)
(t)
10
10
3
3
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