MOSFET N-CH 600V 6.5A TO-220F

FDPF7N60NZ

Manufacturer Part NumberFDPF7N60NZ
DescriptionMOSFET N-CH 600V 6.5A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET-II™
FDPF7N60NZ datasheet
 


Specifications of FDPF7N60NZ

Input Capacitance (ciss) @ Vds730pF @ 25VFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs1.25 Ohm @ 3.25A, 10V
Drain To Source Voltage (vdss)600VCurrent - Continuous Drain (id) @ 25° C6.5A
Vgs(th) (max) @ Id5V @ 250µAGate Charge (qg) @ Vgs17nC @ 10V
Power - Max33WMounting TypeThrough Hole
Package / CaseTO-220-3 Full PackTransistor PolarityPNP, N-Channel
Mounting StyleThrough HolePower Dissipation33 W
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDP7N60NZ / FDPF7N60NZ
N-Channel MOSFET
600V, 6.5A, 1.25
Features
• R
= 1.05 ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 13nC)
• Low C
( Typ. 7pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• ESD Improved capability
• RoHS compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Case to Sink Typ.
CS
R
Thermal Resistance, Junction to Ambient
JA
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. A
Description
= 3.25A
These N-Channel enhancement mode power field effect transis-
D
tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor cor-
rection.
TO-220F
G
D
S
FDPF Series
(potted)
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
September 2010
UniFET-II
FDPF7N60NZ
FDP7N60NZ
600
±30
6.5
6.5*
3.9
3.9*
(Note 1)
26
26*
(Note 2)
275
(Note 1)
6.5
(Note 1)
14.7
(Note 3)
10
147
33
1.2
0.26
-55 to +150
300
FDP7N60NZ
FDPF7N60NZ
0.85
3.8
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF7N60NZ Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP7N60NZ / FDPF7N60NZ Rev. A Description = 3.25A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to mini- ...

  • Page 2

    ... Starting 6.5A, di/dt 200A/s, V  Starting DSS 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP7N60NZ / FDPF7N60NZ Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250 ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 5000 1000 100 ( C iss = shorted C oss = rss = Note 1MHz 1 0 Drain-Source Voltage [V] DS FDP7N60NZ / FDPF7N60NZ Rev. A Figure 2. Transfer Characteristics  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage V = 20V Note : Figure 6. Gate Charge Characteristics C iss ...

  • Page 4

    ... Limited by R DS(on) * Notes : 0 150 J 3. Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs Case Temperature Case Temperature C FDP7N60NZ / FDPF7N60NZ Rev. A (Continued) Figure 8. On-Resistance Variation * Notes : 250uA D 50 100 150 o C] Figure 10. Maximum Drain Current 100   100 s 1ms 10ms ...

  • Page 5

    ... Single pulse 0.001 -5 10 FDP7N60NZ / FDPF7N60NZ Rev. A Figure 12. Transient Thermal Response Curve -FDPF7N60NZ Single pulse - Rectangular Pulse Duration [sec] Figure 13. Transient Thermal Response Curve -FDP7N60NZ - Rectangular Pulse Duration [sec] ...

  • Page 6

    ... FDP7N60NZ / FDPF7N60NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP7N60NZ / FDPF7N60NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

  • Page 8

    ... Mechanical Dimensions FDP7N60NZ / FDPF7N60NZ Rev. A TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP7N60NZ / FDPF7N60NZ Rev. A (Continued) TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP7N60NZ / FDPF7N60NZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...