FDPF10N60NZ

Manufacturer Part NumberFDPF10N60NZ
DescriptionMOSFET N-CH 600V 10A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET-II™
FDPF10N60NZ datasheet
 

Specifications of FDPF10N60NZ

Input Capacitance (ciss) @ Vds1475pF @ 25VFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs750 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)600VCurrent - Continuous Drain (id) @ 25° C10A
Vgs(th) (max) @ Id5V @ 250µAGate Charge (qg) @ Vgs30nC @ 10V
Power - Max38WMounting TypeThrough Hole
Package / CaseTO-220-3 Full PackLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP10N60NZ / FDPF10N60NZ
N-Channel MOSFET
600V, 10A, 0.75
Features
• R
= 0.64 ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low Gate Charge ( Typ. 23nC)
• Low C
( Typ. 10pF)
rss
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Case to Sink Typ
CS
R
Thermal Resistance, Junction to Ambient
JA
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. A
Description
= 5A
These N-Channel enhancement mode power field effect
D
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
G
S
D
FDPF Series
(potted)
o
T
= 25
C unless otherwise noted
*
C
Parameter
o
- Continuous (T
= 25
C)
C
o
- Continuous (T
= 100
C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
September 2010
UniFET-II
D
D
G
G
S
S
FDP10N60NZ
FDPF10N60NZ
Units
600
V
±25
V
10
10*
A
6
6*
40
40*
A
550
mJ
10
A
18.5
mJ
10
V/ns
185
38
W
o
1.5
0.3
W/
C
o
-55 to +150
C
o
300
C
Units
FDP10N60NZ
FDPF10N60NZ
0.68
3.3
o
0.5
-
C/W
62.5
62.5
www.fairchildsemi.com
TM

FDPF10N60NZ Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP10N60NZ / FDPF10N60NZ Rev. A Description = 5A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... G 10A, di/dt  200A/s, V  Starting DSS 4.Pulse test: Pulse width s,Duty Cycle  5. Essentially Independent of Operating Temperature Typical Characteristics FDP10N60NZ / FDPF10N60NZ Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 4000 1000 100 iss = shorted C oss = rss = Drain-Source Voltage [V] DS FDP10N60NZ / FDPF10N60NZ Rev. A Figure 2. Transfer Characteristics 100 *Notes:  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 100 = 10V V = 20V GS o *Note Figure 6. Gate Charge Characteristics ...

  • Page 4

    ... Operation in This Area is Limited by R DS(on) *Notes: 0.1 0.01 0 Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs. Case Temperature Case Temperature C FDP10N60NZ / FDPF10N60NZ Rev. A (Continued) Figure 8. On-Resistance Variation 2.75 *Notes  250 A D 0.25 50 100 150 Figure 10. Maximum Safe Operating Area   ...

  • Page 5

    ... Typical Performance Characteristics 2 1 0.1 0.01 0.005 5 1 0.1 0.01 0.001 10 FDP10N60NZ / FDPF10N60NZ Rev. A (Continued) Figure 12. Transient Thermal -FDP10N60NZ 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse - Rectangular Pulse Duration [sec] Figure 13. Transient Thermal -FDPF10N60NZ 0.5 0.2 0.1 0.05 0.02 0.01 ...

  • Page 6

    ... FDP10N60NZ / FDPF10N60NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP10N60NZ / FDPF10N60NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

  • Page 8

    ... Mechanical Dimensions FDP10N60NZ / FDPF10N60NZ Rev. A TO-220 8 www.fairchildsemi.com ...

  • Page 9

    ... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP10N60NZ / FDPF10N60NZ Rev. A TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP10N60NZ / FDPF10N60NZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...